Datasheet > VS-4EGU06-M3

VS-4EGU06-M3

更新时间： 2024-09-16 14:55:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	141K
描述
Ultrafast Rectifier, 4 A FRED Pt?

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VS-4EGU06-M3 数据手册

VS-4EGU06-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 4 A FRED Pt^®

FEATURES

• Ultrafast recovery time, reduced Q_rrand soft

recovery

• 175 °C maximum operating junction temperature

• For PFC CRM/CCM, snubber operation

• Low forward voltage drop

Cathode

Anode

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Designed and qualified according to JEDEC^®-JESD 47

SMB (DO-214AA)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

State of the art ultrafast recovery rectifiers designed with

optimized performance of forward voltage drop, ultrafast

recovery time, and fast recovery.

3D Models

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

PRIMARY CHARACTERISTICS

I_F(AV)

4 A

These devices are intended for use in PFC boost stage in the

AC/DC section of SMPS, inverters or as freewheeling

diodes.

V_R

600 V

0.94 V

45 ns

175 °C

V_Fat I_F

_rrtyp.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element and snubbers.

T_Jmax.

Package

SMB (DO-214AA)

Single

Circuit configuration

MECHANICAL DATA

Case: SMB (DO-214AA)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

Polarity: color band denotes the cathode end

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

I_F(AV)

T_L= 103 °C ⁽¹⁾

T_J= 25 °C, 6 ms square pulse

I_FSM

100

T_J, T_Stg

-55 to +175

°C

Note

(1)

Mounted on PCB with minimum pad size

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

600

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

1.3

1.15

I_F= 4 A

1.12

0.94

Forward voltage

V_F

I_F= 4 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

100

C_T

6.8

Revision: 17-Mar-2021

Document Number: 94774

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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