Datasheet > VS-4ECU06-M3

VS-4ECU06-M3

更新时间： 2024-09-15 12:36:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	133K
描述
Ultrafast Rectifier, 4 A FRED Pt

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VS-4ECU06-M3 数据手册

New Product

VS-4ECU06-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 4 A FRED Pt^®

FEATURES

• Ultrafast recovery time, reduced Q_rrand

soft recovery

• 175 °C maximum operating junction

temperature

• For PFC CRM/CCM, snubber operation

• Low forward voltage drop

• Low leakage current

Cathode

Anode

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

SMC (DO-214AB)

• Designed and qualified according to JEDEC-JESD47

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

PRODUCT SUMMARY

DESCRIPTION/APPLICATIONS

Package

SMC

4 A

State of the art ultrafast recovery rectifiers designed with

optimized performance of forward voltage drop, ultrafast

recovery time, and soft recovery.

I_F(AV)

V_R

600 V

1.3 V

45 ns

175 °C

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

V_Fat I_F

t_rrtyp.

T_Jmax.

Diode variation

These devices are intended for use in PFC Boost stage in

the AC/DC section of SMPS, inverters or as freewheeling

diodes.

Single die

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

600

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

I_F(AV)

T_L= 117 °C ⁽¹⁾

T_J= 25 °C

I_FSM

120

T_J, T_Stg

- 55 to 175

°C

Note

(1)

Mounted on PCB with minimum pad size

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

600

I_F= 4 A

1.07

0.88

1.3

1.1

Forward voltage

V_F

I_F= 4 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

100

C_T

7.8

Revision: 11-Apr-13

Document Number: 94778

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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