Datasheet > VS-45EPS16L-M3

VS-45EPS16L-M3

更新时间： 2023-12-06 20:02:12

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	188K
描述
High Voltage Input Rectifier Diode, 45 A

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VS-45EPS16L-M3 数据手册

VS-45EPS16L-M3, VS-45APS16L-M3

www.vishay.com

Vishay Semiconductors

High Voltage Input Rectifier Diode, 45 A

FEATURES

• Very low forward voltage drop

• Glass passivated pellet chip junction

• Designed and qualified according to

JEDEC^®-JESD 47

• AEC-Q101 qualified P/N available

(VS-45EPS16LHM3, VS-45APS16LHM3)

TO-247AD 3L

TO-247AD 2L

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Base cathode

APPLICATIONS

• Input rectification for single and three phase bridge

configurations

• Off-board EV/HEV battery chargers (AEC-Q101 qualified

part for on-board chargers also available)

Cathode

Anode

• Renewable energy inverters

VS-45EPS16L-M3

VS-45APS16L-M3

• Input rectification for single and three phase bridge

configurations

PRIMARY CHARACTERISTICS

• Vishay Semiconductors switches and output rectifiers

which are available in identical package outlines

I_F(AV)

45 A

V_R

V_Fat I_F

1600 V

DESCRIPTION

1.16 V

I_FSM

500 A

150 °C

High voltage rectifiers optimized for very low forward

voltage drop with moderate leakage.

T_Jmax.

These devices are intended for use in main rectification

(single or three phase bridge)

Package

TO-247AD 2L, TO-247AD 3L

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Sinusoidal waveform

1600

500

V_F

45 A, T_J= 25 °C

1.16

T_J

-40 to +150

°C

VOLTAGE RATINGS

V_RSM, MAXIMUM

V_RRM, MAXIMUM

PEAK REVERSE VOLTAGE

I_RRM

AT 150 °C

NON-REPETITIVEPEAKREVERSE

PART NUMBER

VOLTAGE

VS-45EPS16L-M3

VS-45APS16L-M3

1600

1700

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

T_C= 109 °C, 180° conduction half sine wave

420

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

10 ms sine pulse, rated V_RRMapplied

10 ms sine pulse, no voltage reapplied

t = 0.1 ms to 10 ms, no voltage reapplied

Maximum peak one cycle 

non-repetitive surge current

I_FSM

500

884

Maximum I²t for fusing

I²t

A²s

1250

12 500

Maximum I²t for fusing

I²t

A²s

Revision: 06-Jul-2018

Document Number: 96478

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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