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VS-3EYH01HM3 PDF预览

VS-3EYH01HM3

更新时间: 2024-09-26 14:49:47
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 143K
描述
Hyperfast Rectifier, 3 A FRED Pt?

VS-3EYH01HM3 数据手册

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VS-3EYH01HM3, VS-3EYH02HM3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 3 A FRED Pt®  
FEATURES  
®
eSMP Series  
• Low profile package  
• Ideal for automated placement  
• Low forward voltage drop, low power losses  
• Low leakage current  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
Top View  
Bottom View  
• AEC-Q101 qualified, class 2 whisker test  
• Compatible to SOD-128 package case outline  
SlimSMAW (DO-221AD)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
DESCRIPTION / APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
For use in high frequency, freewheeling, DC/DC converters,  
PFC, and in snubber industrial, and automotive  
applications.  
3
D
3
D
3D Models  
MECHANICAL DATA  
Case: SlimSMAW (DO-221AD)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
PRIMARY CHARACTERISTICS  
IF(AV)  
3 A  
VR  
VF at IF  
100 V, 200 V  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
0.71 V  
IFSM  
70 A  
16 ns  
Polarity: color band denotes cathode end  
trr (typ.)  
TJ max.  
175 °C  
Package  
Circuit configuration  
SlimSMAW (DO-221AD)  
Single  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
VS-3EYH01HM3  
Peak repetitive reverse voltage  
VS-3EYH02HM3  
100  
VRRM  
V
A
200  
(1)  
Average rectified forward current  
IF(AV)  
TC = 137 °C  
TJ = 25 °C, 10 ms sine pulse wave  
3
70  
Non-repetitive peak surge current  
IFSM  
Operating junction and storage temperatures  
TJ, TStg  
-55 to +175  
°C  
Note  
(1)  
Mounted on infinite heatsink  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX. UNITS  
VS-3EYH01HM3  
VS-3EYH02HM3  
V
BR, VR  
100  
-
-
-
Breakdown voltage, blocking  
voltage  
IR = 100 μA  
200  
-
V
IF = 3 A  
-
-
-
-
-
0.86  
0.71  
-
0.95  
Forward voltage, per diode  
VF  
IF = 3 A, TJ = 150 °C  
VR = VR rated  
0.79  
2
Reverse leakage current, per diode  
Junction capacitance  
IR  
μA  
20  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
-
CT  
16  
-
pF  
Revision: 28-Jan-2021  
Document Number: 96384  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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