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VS-3EJU06HM3 PDF预览

VS-3EJU06HM3

更新时间: 2024-11-14 14:55:39
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 181K
描述
Ultrafast Rectifier, 3 A FRED Pt?

VS-3EJU06HM3 数据手册

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VS-3EJU06HM3  
Vishay Semiconductors  
www.vishay.com  
Ultrafast Rectifier, 3 A FRED Pt®  
FEATURES  
®
eSMP Series  
• Ultrafast recovery time, reduced Qrr, and soft  
recovery  
175 °C maximum operating junction temperature  
• Low forward voltage drop  
• Low leakage current  
Bottom View  
Top View  
• Meets MSL level 1, per J-STD-020,  
LF maximum peak of 260 °C  
SlimSMA (DO-221AC)  
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
Anode  
DESCRIPTION / APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
State of the art ultrafast recovery rectifiers designed with  
optimized performance of forward voltage drop and ultrafast  
recovery time, and fast recovery.  
3
D
3
D
3D Models  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
These devices are intended for use in snubber, output  
operation, inverters or as freewheeling diodes.  
IF(AV)  
3 A  
VR  
600 V  
0.99 V  
50 ns  
175 °C  
The extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element  
VF at IF  
trr  
TJ max.  
Package  
SlimSMA (DO-221AC)  
Single  
MECHANICAL DATA  
Circuit configuration  
Case: SlimSMA (DO-221AC)  
Molding compound meets UL 94 V-0 flammability rating  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
Polarity: color band denotes cathode end  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
600  
V
IF(AV)  
TC = 117 °C (1)  
TJ = 25 °C  
3
43  
A
IFSM  
TJ, TStg  
-55 to +175  
°C  
Note  
(1)  
Device on PCB with 8 mm x 16 mm soldering lands  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
V
BR, VR  
IR = 100 μA  
600  
-
1.15  
0.99  
-
-
1.35  
1.2  
3
IF = 3 A  
-
-
-
-
-
V
Forward voltage  
VF  
IF = 3 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
100  
-
CT  
6.2  
Revision: 28-Jan-2021  
Document Number: 96068  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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