Datasheet > VS-3EJU06-M3

VS-3EJU06-M3

更新时间： 2024-11-14 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	178K
描述
Ultrafast Rectifier, 3 A FRED Pt?

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VS-3EJU06-M3 数据手册

VS-3EJU06-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 3 A FRED Pt^®

FEATURES

eSMP Series

• Ultrafast recovery time, reduced Q_rr, and soft

recovery

• 175 °C maximum operating junction temperature

• Low forward voltage drop

• Low leakage current

Bottom View

Top View

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SlimSMA (DO-221AC)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

Anode

DESCRIPTION / APPLICATIONS

State of the art ultrafast recovery rectifiers designed with

optimized performance of forward voltage drop and ultrafast

recovery time, and fast recovery.

LINKS TO ADDITIONAL RESOURCES

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

3D Models

These devices are intended for use in snubber, output

operation, inverters or as freewheeling diodes.

PRIMARY CHARACTERISTICS

I_F(AV)

3 A

The extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

V_R

600 V

0.99 V

50 ns

175 °C

V_Fat I_F

t_rr

MECHANICAL DATA

Case: SlimSMA (DO-221AC)

T_Jmax.

Package

SlimSMA (DO-221AC)

Single

Molding compound meets UL 94 V-0 flammability rating

Circuit configuration

Terminals: matte tin plated leads, solderable per

J-STD-002

Polarity: color band denotes cathode end

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

600

I_F(AV)

T_C= 117 °C ⁽¹⁾

T_J= 25 °C

I_FSM

T_J, T_Stg

-55 to +175

°C

Note

(1)

Device on PCB with 8 mm x 16 mm soldering lands

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

600

1.15

0.99

1.35

1.2

I_F= 3 A

Forward voltage

V_F

I_F= 3 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

100

C_T

6.2

Revision: 28-Jan-2021

Document Number: 96067

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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