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VS-3EGU06WHM3 PDF预览

VS-3EGU06WHM3

更新时间: 2024-11-14 14:55:47
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威世 - VISHAY /
页数 文件大小 规格书
6页 145K
描述
Ultrafast Rectifier, 3 A FRED Pt?

VS-3EGU06WHM3 数据手册

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VS-3EGU06WHM3  
Vishay Semiconductors  
www.vishay.com  
Ultrafast Rectifier, 3 A FRED Pt®  
FEATURES  
• Ultrafast recovery time, reduced Qrr and soft  
recovery  
• 175 °C maximum operating junction  
temperature  
Cathode  
Anode  
• For PFC CRM/CCM, snubber operation  
• Low forward voltage drop  
• Low leakage current  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
SMB (DO-214AA)  
• AEC-Q101 qualified meets JESD 201 class 2 whisker test  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
DESCRIPTION / APPLICATIONS  
3D Models  
State of the art ultrafast recovery rectifiers designed with  
optimized performance of forward voltage drop, ultrafast  
recovery time, and fast recovery.  
PRIMARY CHARACTERISTICS  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
IF(AV)  
3 A  
VR  
600 V  
0.99 V  
41 ns  
175 °C  
These devices are intended for use in PFC Boost stage in  
the AC/DC section of SMPS, inverters or as freewheeling  
diodes.  
VF at IF  
t
rr typ.  
TJ max.  
Package  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
SMB (DO-214AA)  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: SMB (DO-214AA)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
Polarity: color band denotes the cathode end  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
600  
V
Average rectified forward current  
Non-repetitive peak surge current per leg  
Operating junction and storage temperatures  
IF(AV)  
TL = 110 °C (1)  
TJ = 25 °C, 6 ms square pulse  
3
55  
A
IFSM  
TJ, TStg  
-55 to +175  
°C  
Note  
(1)  
Mounted on PCB with minimum pad size  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
600  
-
1.35  
1.2  
3
IF = 3 A  
-
-
-
-
-
1.15  
0.99  
-
V
Forward voltage  
VF  
IF = 3 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current  
Junction capacitance  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 600 V  
-
100  
-
CT  
3.9  
Revision:17-Mar-2021  
Document Number: 95852  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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