VS-3EGU06WHM3
Vishay Semiconductors
www.vishay.com
Ultrafast Rectifier, 3 A FRED Pt®
FEATURES
• Ultrafast recovery time, reduced Qrr and soft
recovery
• 175 °C maximum operating junction
temperature
Cathode
Anode
• For PFC CRM/CCM, snubber operation
• Low forward voltage drop
• Low leakage current
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• AEC-Q101 qualified meets JESD 201 class 2 whisker test
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3
D
DESCRIPTION / APPLICATIONS
3D Models
State of the art ultrafast recovery rectifiers designed with
optimized performance of forward voltage drop, ultrafast
recovery time, and fast recovery.
PRIMARY CHARACTERISTICS
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness and
reliability characteristics.
IF(AV)
3 A
VR
600 V
0.99 V
41 ns
175 °C
These devices are intended for use in PFC Boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
VF at IF
t
rr typ.
TJ max.
Package
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
SMB (DO-214AA)
Single
Circuit configuration
MECHANICAL DATA
Case: SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes the cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
600
V
Average rectified forward current
Non-repetitive peak surge current per leg
Operating junction and storage temperatures
IF(AV)
TL = 110 °C (1)
TJ = 25 °C, 6 ms square pulse
3
55
A
IFSM
TJ, TStg
-55 to +175
°C
Note
(1)
Mounted on PCB with minimum pad size
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNITS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
600
-
1.35
1.2
3
IF = 3 A
-
-
-
-
-
1.15
0.99
-
V
Forward voltage
VF
IF = 3 A, TJ = 150 °C
VR = VR rated
Reverse leakage current
Junction capacitance
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 600 V
-
100
-
CT
3.9
Revision:17-Mar-2021
Document Number: 95852
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000