VS-3ECH01HM3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 3 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
• 175 °C maximum operating junction
temperature
Cathode
Anode
• Specified for output and snubber operation
• Low forward voltage drop
• Low leakage current
SMC (DO-214AB)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified, meets JESD 201 class 2 whisker test
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
DESCRIPTION / APPLICATIONS
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
PRIMARY CHARACTERISTICS
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
IF(AV)
3 A
VR
100 V
0.69 V
25 ns
175 °C
VF at IF
trr
These devices are intended for use in snubber, boost,
lighting, piezo-injection, as high frequency rectifiers, and
freewheeling diodes.
TJ max.
The extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
Package
SMC (DO-214AB)
Single
Circuit configuration
MECHANICAL DATA
Case: SMC (DO-214AB)
Molding compound meets UL 94 V-0 flammability rating
Terminals: matte tin plated leads, solderable per
J-STD-002
Polarity: color band denotes cathode end
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VRRM
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
100
V
IF(AV)
TSp = 142 °C
TJ = 25 °C, 6 ms square pulse
3
A
IFSM
130
TJ, TStg
-55 to +175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
UNITS
Breakdown voltage, blocking voltage
V
BR, VR
IR = 100 μA
100
-
0.90
0.75
2
IF = 3 A
-
-
-
-
-
0.83
0.69
-
V
Forward voltage, per diode
VF
IF = 3 A, TJ = 125 °C
VR = VR rated
Reverse leakage current, per diode
Junction capacitance
IR
μA
pF
TJ = 125 °C, VR = VR rated
VR = 100 V
1
10
-
CT
23
Revision: 13-Apr-2021
Document Number: 95835
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000