Datasheet > VS-3EAH02HM3

VS-3EAH02HM3

更新时间： 2023-12-06 20:10:34

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	189K
描述
Ultrafast Rectifier, 1 A FRED Pt?

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VS-3EAH02HM3 数据手册

VS-3EAH02HM3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 3 A FRED Pt^®

FEATURES

• Very low profile - typical height of 0.88 mm

• Ideal for automated placement

• Wettable flanks allows easy inspection with

AOI (automated optical inspection). No X-ray

necessary

• Low forward voltage drop, low power losses

• Low leakage current

DFN3820A

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Cathode

Anode

• For PFC, CRM snubber operation

• AEC-Q101 qualified

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

EDA / CAD

TYPICAL APPLICATIONS

For use in high frequency inverters, DC/DC converters,

freewheeling diodes, clamping and snubber, polarity

protection, dual voltage injector drivers, piezo drivers, ECU,

Antilock Braking Systems (ABS), HID and LED lighting

PRIMARY CHARACTERISTICS

I_F(AV)

3 A

200 V

V_R

V_Fat I_F

0.73 V

15 ns

MECHANICAL DATA

t_rr(typ.)

Case: DFN3820A

I_FSM

61 A

Molding compound meets UL 94 V-0 flammability rating

T_Jmax.

175 °C

DFN3820A

Single

Terminals: matte tin plated leads, solderable per

J-STD-002, meets JESD 201 class 2 whisker test

Package

Circuit configuration

Polarity: color band denotes cathode end

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

200

I_F(AV)

T_M= 160 °C

T_J= 25 °C, 10 ms sine pulse

I_FSM

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

200

I_F= 3 A

0.90

0.73

0.96

0.79

Forward voltage

V_F

I_F= 3 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 26-Jul-2023

Document Number: 97070

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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