VS-3C40CP12L-M3
Vishay Semiconductors
www.vishay.com
1200 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 20 A
FEATURES
• Majority carrier diode using Schottky technology
on SiC wide band gap material
Base common
cathode
2
• Improved VF and efficiency by thin wafer
technology
• Positive VF temperature coefficient, for easy
paralleling
1
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
• 175 °C maximum operating junction temperature
• MPS structure for high ruggedness to forward current
surge events
1
2
3
2
Anode
Anode
3
TO-247AD 3L
Common
Cathode
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275 °C maximum, 10 s per
JESD 22-B106
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
DESCRIPTION / APPLICATIONS
Wide band gap SiC based 1200 V Schottky diode, designed
for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
PRIMARY CHARACTERISTICS
IF
2 x 20 A
1200 V
VR
VF at IF at 25 °C, typ.
TJ max.
1.35 V
175 °C
IR at VR at 175 °C
12 μA
QC (VR = 800 V)
107 nC
MECHANICAL DATA
Package
TO-247AD 3L
Common cathode
Case: TO-247AD 3L
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Circuit configuration
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Mounting torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
VRRM
1200
V
(1)
IF
TC = 145 °C (DC)
Continuous forward current, per leg
20
A
V
(2)
IF
TC = 152 °C (DC)
DC blocking voltage, per leg
VDC
1200
90
Repetitive peak forward current, per leg
IFRM
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %
TC = 25 °C, tp = 10 ms, half sine wave
180
A
Non-repetitive peak forward surge current, per leg
Power dissipation, per leg
IFSM
T
C = 110 °C, tp = 10 ms, half sine wave
148
TC = 25 °C
TC = 110 °C
TC = 25 °C
TC = 110 °C
188
(1)
Ptot
W
W
81
250
(2)
Ptot
108
T
C = 25 °C
162
I2t value, per leg
i2dt
A2s
°C
TC = 110 °C
105
Operating junction and storage temperatures
TJ (3), TStg
-55 to +175
Notes
(1)
(2)
(3)
Based on maximum Rth
Based on typical Rth
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
Revision: 05-Jan-2024
Document Number: 97169
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000