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VS-3C15EP12L-M3

更新时间： 2024-11-14 17:00:55
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威世 - VISHAY /
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6页 155K
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1200 V Power SiC Merged PIN Schottky Diode, 15 A

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 浏览型号VS-3C15EP12L-M3的Datasheet PDF文件第2页浏览型号VS-3C15EP12L-M3的Datasheet PDF文件第3页浏览型号VS-3C15EP12L-M3的Datasheet PDF文件第4页浏览型号VS-3C15EP12L-M3的Datasheet PDF文件第5页浏览型号VS-3C15EP12L-M3的Datasheet PDF文件第6页 
VS-3C15EP12L-M3  
Vishay Semiconductors  
www.vishay.com  
1200 V Power SiC Gen 3 Merged PIN Schottky Diode, 15 A  
FEATURES  
• Majority carrier diode using Schottky technology  
on SiC wide band gap material  
Base cathode  
2
• Improved VF and efficiency by thin wafer  
technology  
2
• Positive VF temperature coefficient for easy  
paralleling  
1
• Virtually no recovery tail and no switching losses  
• Temperature invariant switching behavior  
• 175 °C maximum operating junction temperature  
• MPS structure for high ruggedness to forward current  
surge events  
• Meets JESD 201 class 1A whisker test  
• Solder bath temperature 275 °C maximum, 10 s per  
JESD 22-B106  
3
1
3
Anode  
Cathode  
TO-247AD 2L  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION / APPLICATIONS  
Wide band gap SiC based 1200 V Schottky diode, designed  
for high performance and ruggedness.  
Optimum choice for high speed hard switching and efficient  
operation over a wide temperature range, it is also  
recommended for all applications suffering from Silicon  
ultrafast recovery behavior.  
Typical applications include AC/DC PFC and DC/DC ultra  
high frequency output rectification in FBPS and LLC  
converters.  
PRIMARY CHARACTERISTICS  
IF  
15 A  
VR  
1200 V  
1.35 V  
VF at IF at 25 °C, typ.  
TJ max.  
175 °C  
IR at VR at 175 °C  
6.5 μA  
QC (VR = 800 V)  
81 nC  
Package  
TO-247AD 2L  
Single  
Circuit configuration  
MECHANICAL DATA  
Case: TO-247AD 2L  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Mounting torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
VRRM  
1200  
V
(1)  
IF  
TC = 147 °C (DC)  
Continuous forward current  
15  
A
(2)  
IF  
TC = 155 °C (DC)  
DC blocking voltage  
VDC  
1200  
V
A
Repetitive peak forward current  
IFRM  
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %  
TC = 25 °C, tp = 10 ms, half sine wave  
TC = 110 °C, tp = 10 ms, half sine wave  
TC = 25 °C  
70  
110  
Non-repetitive peak forward surge current  
Power dissipation  
IFSM  
A
105  
150  
(1)  
Ptot  
W
W
TC = 110 °C  
65  
TC = 25 °C  
214  
(2)  
Ptot  
TC = 110 °C  
93  
T
C = 25 °C  
61  
i2dt  
I2t value  
A2s  
°C  
TC = 110 °C  
54  
Operating junction and storage temperatures TJ (3), TStg  
-55 to +175  
Notes  
(1)  
(2)  
(3)  
Based on maximum Rth  
Based on typical Rth  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA  
Revision: 05-Jan-2024  
Document Number: 97183  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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