Datasheet > VS-3C10ET12S2L-M3

VS-3C10ET12S2L-M3

更新时间： 2024-11-14 17:01:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	182K
描述
1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 10 A

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VS-3C10ET12S2L-M3

www.vishay.com

Vishay Semiconductors

1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 10 A

FEATURES

Base

• Majority carrier diode using Schottky technology

on SiC wide band gap material

cathode

• High CTI molding compound provides excellent

electrical insulation at relevant working voltages

• Improved V_Fand efficiency by thin wafer

technology

• Positive V_Ftemperature coefficient for easy paralleling

• Virtually no recovery tail and no switching losses

N/C

Anode

• Temperature invariant switching behavior

• 175 °C maximum operating junction temperature

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 245 °C

• MPS structure for high ruggedness to forward current

surge events

• Meets JESD 201 class 1A whisker test

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

D²PAK 2L (TO-263AB 2L)

LINKS TO ADDITIONAL RESOURCES

3D Models

DESCRIPTION / APPLICATIONS

Wide band gap SiC based 1200 V Schottky diode, designed

for high performance and ruggedness.

Optimum choice for high speed hard switching and efficient

operation over a wide temperature range, it is also

recommended for all applications suffering from Silicon

ultrafast recovery behavior.

Typical applications include AC/DC PFC and DC/DC ultra

high frequency output rectification in FBPS and LLC

converters.

PRIMARY CHARACTERISTICS

I_F

10 A

V_R

1200 V

1.35 V

175 °C

4.5 μA

55 nC

V_Fat I_Fat 25 °C, typ.

T_Jmax.

I_Rat V_Rat 175 °C

Q_C(V_R= 800 V)

Package

D²PAK 2L (TO-263AB 2L)

MECHANICAL DATA

Circuit configuration

Single

Case: D²PAK 2L (TO-263AB 2L)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

MAXIMUM RATINGS (T_A= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

V_RRM

1200

(1)

I_F

T_C= 145 °C (DC)

Continuous forward current

(2)

I_F

T_C= 152 °C (DC)

DC blocking voltage

V_DC

1200

Repetitive peak forward current

I_FRM

T_C= 25 °C, f = 50 Hz, square wave, DC = 25 %

T_C= 25 °C, t_p= 10 ms, half sine wave

Non-repetitive peak forward surge current

Power dissipation

I_FSM

_C= 110 °C, t_p= 10 ms, half sine wave

T_C= 25 °C

T_C= 110 °C

T_C= 25 °C

(1)

P_tot

125

(2)

P_tot

_C= 110 °C

_C= 25 °C

I²t value

i²dt

A²s

°C



T_C= 110 °C

Operating junction and storage temperatures T_J⁽³⁾, T_Stg

-55 to +175

Notes

(1)

(2)

(3)

Based on maximum R_th

Based on typical R_th

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 10-Jan-2024

Document Number: 97178

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-3C10ET12S2L-M3相关器件

型号	品牌	获取价格	描述	数据表
VS-3C10ET12T-M3	VISHAY	获取价格	1200 V Power SiC Merged PIN Schottky Diode, 10 A
VS-3C12ET07S2L-M3	VISHAY	获取价格	650 V Gen 3 Power SiC Merged PIN Schottky Diode, 12 A
VS-3C12ET07T-M3	VISHAY	获取价格	650 V Power SiC Merged PIN Schottky Diode, 12 A
VS-3C15EP12L-M3	VISHAY	获取价格	1200 V Power SiC Merged PIN Schottky Diode, 15 A
VS-3C15ET12S2L-M3	VISHAY	获取价格	1200 V Gen 3 Power SiC Merged PIN Schottky Diode, 15 A
VS-3C15ET12T-M3	VISHAY	获取价格	1200 V Power SiC Merged PIN Schottky Diode, 15 A
VS-3C16CP07L-M3	VISHAY	获取价格	650 V Power SiC Gen 3 Merged PIN Schottky Diode, 2 x 8 A
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