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VS-3C10ET07T-M3

更新时间： 2024-11-14 14:55:23
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威世 - VISHAY /
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650 V Power SiC Merged PIN Schottky Diode, 10 A

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VS-3C10ET07T-M3  
Vishay Semiconductors  
www.vishay.com  
650 V Power SiC Gen 3 Merged PIN Schottky Diode, 10 A  
FEATURES  
Base cathode  
• Majority carrier diode using Schottky technology  
on SiC wide band gap material  
2
2
• Improved VF and efficiency by thin wafer  
technology  
• Positive VF temperature coefficient for easy  
paralleling  
• Virtually no recovery tail and no switching losses  
• Temperature invariant switching behavior  
1
3
1
3
Anode  
Cathode  
TO-220AC 2L  
• 175 °C maximum operating junction temperature  
• MPS structure for high ruggedness to forward current  
surge events  
LINKS TO ADDITIONAL RESOURCES  
• Meets JESD 201 class 2 whisker test  
• Solder bath temperature 275 °C maximum, 10 s per  
JESD 22-B106  
3
D
3
D
3D Models  
Application  
Notes  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRIMARY CHARACTERISTICS  
DESCRIPTION / APPLICATIONS  
Wide band gap SiC based 650 V Schottky diode, designed  
for high performance and ruggedness.  
Optimum choice for high speed hard switching and efficient  
operation over a wide temperature range, it is also  
recommended for all applications suffering from Silicon  
ultrafast recovery behavior.  
IF(AV)  
10 A  
650 V  
1.46 V  
175 °C  
4.5 μA  
29 nC  
VR  
VF at IF at 150 °C  
TJ max.  
I
R at VR at 175 °C  
Q
C (VR = 400 V)  
Package  
TO-220AC 2L  
Single  
Typical applications include AC/DC PFC and DC/DC ultra  
high frequency output rectification in FBPS and LLC  
converters.  
Circuit configuration  
MECHANICAL DATA  
Case: TO-220AC 2L  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-M3 - halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
Mounting torque: 10 in-lbs maximum  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
DC blocking voltage  
650  
V
A
V
A
TC = 130 °C (DC)  
10  
VDC  
650  
Repetitive peak forward current  
IFRM  
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %  
TC = 25 °C, tp = 10 ms, half sine wave  
TC = 110 °C, tp = 10 ms, half sine wave  
TC = 25 °C  
41  
60  
Non-repetitive peak forward surge current  
Power dissipation  
IFSM  
A
58  
64  
(1)  
Ptot  
W
TC = 110 °C  
28  
18  
TC = 25 °C  
i2dt  
I2t value  
A2s  
°C  
TC = 110 °C  
17  
Operating junction and storage temperatures TJ(2), TStg  
-55 to +175  
Notes  
(1)  
Based on maximum Rth  
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA  
(2)  
Revision: 27-Feb-2023  
Document Number: 97030  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345

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