VS-3C08ET07T-M3
Vishay Semiconductors
www.vishay.com
650 V Power SiC Gen 3 Merged PIN Schottky Diode, 8 A
FEATURES
Base cathode
• Majority carrier diode using Schottky technology
on SiC wide band gap material
2
2
• Improved VF and efficiency by thin wafer
technology
• Positive VF temperature coefficient for easy
paralleling
• Virtually no recovery tail and no switching losses
• Temperature invariant switching behavior
1
3
1
3
Anode
Cathode
TO-220AC 2L
• 175 °C maximum operating junction temperature
• MPS structure for high ruggedness to forward current
surge events
LINKS TO ADDITIONAL RESOURCES
• Meets JESD 201 class 1A whisker test
• Solder bath temperature 275 °C maximum, 10 s per
JESD 22-B106
3
D
3D Models
Application
Notes
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
DESCRIPTION / APPLICATIONS
IF(AV)
8 A
Wide band gap SiC based 650 V Schottky diode, designed
for high performance and ruggedness.
Optimum choice for high speed hard switching and efficient
operation over a wide temperature range, it is also
recommended for all applications suffering from Silicon
ultrafast recovery behavior.
VR
650 V
1.5 V
VF at IF at 150 °C
TJ max.
175 °C
1.9 μA
22 nC
I
R at VR at 175 °C
Q
C (VR = 400 V)
Package
TO-220AC 2L
Single
Typical applications include AC/DC PFC and DC/DC ultra
high frequency output rectification in FBPS and LLC
converters.
Circuit configuration
MECHANICAL DATA
Case: TO-220AC 2L
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
Mounting torque: 10 in-lbs maximum
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
VRRM
IF(AV)
TEST CONDITIONS
VALUES
UNITS
Peak repetitive reverse voltage
Average rectified forward current
DC blocking voltage
650
V
A
V
A
TC = 135 °C (DC)
8
650
VDC
Repetitive peak forward current
IFRM
TC = 25 °C, f = 50 Hz, square wave, DC = 25 %
TC = 25 °C, tp = 10 ms, half sine wave
TC = 110 °C, tp = 10 ms, half sine wave
TC = 25 °C
35
54
Non-repetitive peak forward surge current
Power dissipation
IFSM
A
52
58
(1)
Ptot
W
TC = 110 °C
25
T
C = 25 °C
13.5
12.5
-55 to +175
i2dt
I2t value
A2s
°C
TC = 110 °C
Operating junction and storage temperatures TJ(2), TStg
Notes
(1)
Based on maximum Rth
The heat generated must be less than the thermal conductivity from junction-to-ambient: dPD/dTJ < 1/RθJA
(2)
Revision: 22-Feb-2023
Document Number: 97039
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000