Datasheet > VS-32CTQ025-M3

VS-32CTQ025-M3

更新时间： 2023-12-06 20:03:57

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	130K
描述
High Performance Schottky Rectifier, 2 x 15 A

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VS-32CTQ025-M3 数据手册

VS-32CTQ025-M3, VS-32CTQ030-M3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 15 A

FEATURES

Base

common

cathode

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High

purity,

high

temperature

epoxy

encapsulation for enhanced mechanical strength

and moisture resistance

Anode

Common

cathode

TO-220AB 3L

• Guard ring for enhanced ruggedness and long term

reliability

• Designed and qualified according to JEDEC^®-JESD 47

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

2 x 15 A

25 V, 30 V

0.40 V

V_R

DESCRIPTION

V_Fat I_F

_RMtyp.

97 mA at 125 °C

150 °C

The VS-32CTQ... Schottky rectifier series has been

optimized for low reverse leakage at high temperature. The

proprietary barrier technology allows for reliable operation up

to 150 °C junction temperature. Typical applications are in

switching power supplies, converters, freewheeling diodes,

and reverse battery protection.

T_Jmax.

E_AS

13 mJ

Package

TO-220AB 3L

Circuit configuration

Common cathode

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

25/30

t_p= 5 μs sine

900

15 A_pk, T_J= 125 °C

0.40

T_J

Range

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-32CTQ025-M3

VS-32CTQ030-M3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 115 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current,

see fig. 5

I_F(AV)

5 µs sine or 3 µs rect. pulse

10 ms sine or 6 ms rect. pulse

Following any rated load

condition and with rated

900

250

Maximum peak one cycle non-repetitive

surge current, see fig. 7

I_FSM

_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

T_J= 25 °C, I_AS= 1.20 A, L = 11.10 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 28-Feb-2023

Document Number: 96278

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

下载PDF

与VS-32CTQ025-M3相关器件

型号	品牌	描述	获取价格	数据表
VS-32CTQ025-N3	VISHAY	Schottky Rectifier	获取价格
VS-32CTQ025PBF	VISHAY	Schottky Rectifier	获取价格
VS-32CTQ025SHM3	VISHAY	DIODE SCHOTTKY 25V 15A D2PAK	获取价格
VS-32CTQ025S-M3	VISHAY	High frequency operation	获取价格
VS-32CTQ025STRLHM3	VISHAY	Rectifier Diode, Schottky, 1 Phase, 2 Element, 25V V(RRM), Silicon, TO-263AB, D2PAK-3/2	获取价格
VS-32CTQ025STRL-M3	VISHAY	High frequency operation	获取价格