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VS-30EPH03-N3 PDF预览

VS-30EPH03-N3

更新时间: 2024-11-07 20:06:39
品牌 Logo 应用领域
威世 - VISHAY 超快恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
7页 155K
描述
Rectifier Diode, 1 Phase, 1 Element, 30A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, MODIFIED TO-247AC, 2 PIN

VS-30EPH03-N3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.73
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:ULTRA FAST RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-65 °C最大输出电流:30 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:300 V最大反向电流:60 µA
最大反向恢复时间:0.055 µs表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-30EPH03-N3 数据手册

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VS-30EPH03PbF, VS-30EPH03-N3  
www.vishay.com  
Vishay Semiconductors  
Ultrafast Rectifier, 30 A FRED Pt®  
FEATURES  
Base  
common  
cathode  
• Ultrafast recovery time  
• Low forward voltage drop  
• 175 °C operating junction temperature  
• Low leakage current  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
2
3
Available  
1
3
1
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Cathode  
Anode  
TO-247AC modified  
DESCRIPTION / APPLICATION  
300 V series are the state of the art ultrafast recovery  
rectifiers designed with optimized performance of forward  
voltage drop and ultrafast recovery time.  
PRODUCT SUMMARY  
Package  
TO-247AC modified (2 pins)  
The planar structure and the platinum doped life time  
control guarantee the best overall performance, ruggedness  
and reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diodes in low voltage inverters and chopper  
motor drives.  
IF(AV)  
30 A  
300 V  
VR  
VF at IF  
0.9 V  
t
rr typ.  
See Recovery table  
175 °C  
TJ max.  
Diode variation  
Single die  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
TEST CONDITIONS  
VALUES  
300  
UNITS  
Peak repetitive reverse voltage  
Average rectified forward current  
Non-repetitive peak surge current  
Operating junction and storage temperatures  
V
IF(AV)  
TC = 143 °C  
TJ = 25 °C  
30  
A
IFSM  
300  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 30 A  
300  
-
-
V
-
-
-
-
-
-
1.08  
0.9  
1.25  
1.00  
60  
Forward voltage  
VF  
IR  
IF = 30 A, TJ = 125 °C  
VR = VR rated  
0.05  
280  
90  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 300 V  
600  
-
Junction capacitance  
Series inductance  
CT  
LS  
pF  
nH  
Measured lead to lead 5 mm from package body  
3.5  
-
Revision: 09-Jul-15  
Document Number: 94017  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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