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VS-30CTQ035-M3 PDF预览

VS-30CTQ035-M3

更新时间: 2024-09-19 14:54:15
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 163K
描述
High Performance Schottky Rectifier, 2 x 15 A

VS-30CTQ035-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:26 weeks
风险等级:5.61其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.76 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
最大非重复峰值正向电流:265 A元件数量:2
相数:1端子数量:3
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:35 V最大反向电流:2000 µA
表面贴装:NO技术:SCHOTTKY
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-30CTQ035-M3 数据手册

 浏览型号VS-30CTQ035-M3的Datasheet PDF文件第2页浏览型号VS-30CTQ035-M3的Datasheet PDF文件第3页浏览型号VS-30CTQ035-M3的Datasheet PDF文件第4页浏览型号VS-30CTQ035-M3的Datasheet PDF文件第5页浏览型号VS-30CTQ035-M3的Datasheet PDF文件第6页浏览型号VS-30CTQ035-M3的Datasheet PDF文件第7页 
VS-30CTQ035-M3, VS-30CTQ040-M3, VS-30CTQ045-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 15 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Very low forward voltage drop  
• High frequency operation  
• High  
purity,  
high  
temperature  
epoxy  
1
encapsulation for enhanced mechanical strength  
and moisture resistance  
2
Anode  
Anode  
2
Common  
cathode  
1
3
3
TO-220AB 3L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 x 15 A  
VR  
35 V, 40 V, 45 V  
0.56 V  
VF at IF  
RM max.  
DESCRIPTION  
I
15 mA at 125 °C  
175 °C  
The VS-30CTQ... center tap Schottky rectifier has been  
optimized for very low forward voltage drop, with moderate  
leakage. The proprietary barrier technology allows for  
reliable operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
TJ max.  
EAS  
20 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
30  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
35 to 45  
1060  
tp = 5 μs sine  
15 Apk, TJ = 125 °C (per leg)  
A
0.56  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-30CTQ035-M3  
VS-30CTQ040-M3  
40  
VS-30CTQ045-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
35  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 127 °C, rectangular waveform  
VALUES  
UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
30  
1060  
265  
20  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Following any rated load  
condition and with rated  
IFSM  
V
RRM applied  
Non-repetitive avalanche energy per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 3.0 A, L = 4.40 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
3.0  
Revision: 28-Feb-2023  
Document Number: 96275  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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