Datasheet > VS-2EGH01-M3

VS-2EGH01-M3

更新时间： 2024-11-04 14:54:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	126K
描述
Ultrafast Rectifier, 2 A FRED Pt?

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VS-2EGH01-M3 数据手册

VS-2EGH01-M3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 2 A FRED Pt^®

FEATURES

• Ultrafast recovery time, reduced Q_rrand soft

recovery

• 175 °C maximum operating junction temperature

• Specific for output and snubber operation

• Low forward voltage drop

Cathode

Anode

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

• Meets JESD 201 class 2 whisker test

SMB (DO-214AA)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

LINKS TO ADDITIONAL RESOURCES

DESCRIPTION / APPLICATIONS

State of the art ultrafast recovery rectifiers designed with

optimized performance of forward voltage drop, ultrafast

recovery time, and fast recovery.

3D Models

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness and

reliability characteristics.

PRIMARY CHARACTERISTICS

I_F(AV)

2 A

These devices are intended for use in snubber, output

operation, inverters or as freewheeling diodes.

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce over

dissipation in the switching element.

V_R

100 V

0.66 V

24 ns

175 °C

V_Fat I_F

_rrtyp.

T_Jmax.

Package

SMB (DO-214AA)

Single

MECHANICAL DATA

Case: SMB (DO-214AA)

Circuit configuration

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

Polarity: color band denotes the cathode end

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperatures

100

I_F(AV)

T_L= 150 °C ⁽¹⁾

T_J= 25 °C, 6 ms square pulse

I_FSM

T_J, T_Stg

-55 to +175

°C

Note

(1)

Mounted on PCB with 6 mm x 3.5 mm lands

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

_BR, V_R

I_R= 100 μA

100

0.84

0.66

0.9

0.7

I_F= 2 A

Forward voltage

V_F

I_F= 2 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 100 V

Junction capacitance

C_T

Critical rate if rise of reverse voltage

dV/dt_τ

10 000

V/μs

Revision: 17-Mar-2021

Document Number: 96443

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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