Datasheet > VS-2EFH02-M3

VS-2EFH02-M3

更新时间： 2024-11-30 14:54:07

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	149K
描述
Hyperfast Rectifier, 2 A FRED Pt?

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VS-2EFH02-M3 数据手册

VS-2EFH02-M3

Vishay Semiconductors

www.vishay.com

Hyperfast Rectifier, 2 A FRED Pt^®

FEATURES

• Hyperfast recovery time, reduced Q_rr, and soft

recovery

eSMP Series

• 175 °C maximum operating junction temperature

• Specified for output and snubber operation

• Low forward voltage drop

• Low leakage current

Top view

Bottom view

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

SMF (DO-219AB)

• Meets JESD 201 class 2 whisker test

• Wave and reflow solderable

Cathode

Anode

• Compatible to SOD-123W package case outline

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION / APPLICATIONS

State of the art hyperfast recovery rectifiers designed with

optimized performance of forward voltage drop and

hyperfast recovery.

PRIMARY CHARACTERISTICS

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

I_F(AV)

2 A

V_R

V_Fat I_F(typ. 125 °C)

t_rr

200 V

0.75 V

25 ns

175 °C

These devices are intended for use in snubber boost,

lighting, as high frequency rectifiers, and freewheeling

diodes.

T_Jmax.

Package

SMF (DO-219AB)

Single

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element.

Circuit configuration

MECHANICAL DATA

Case: SMF (DO-219AB)

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

Polarity: color band denotes cathode end

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_RRM

TEST CONDITIONS

VALUES

UNITS

Peak repetitive reverse voltage

200

Average rectified forward current

Non-repetitive peak surge current

Operating junction and storage temperature range

I_F(AV)

T_C= 150 °C ⁽¹⁾

T_J= 25 °C

I_FSM

T_J, T_Stg

-65 to +175

°C

Note

(1)

Device on PCB with 8 mm x 16 mm soldering lands

Revision: 03-Feb-2021

Document Number: 95789

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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与VS-2EFH02-M3相关器件

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VS-2EFU06HM3	VISHAY	获取价格	Ultrafast Rectifier, 2 A FRED Pt?
VS-2EFU06-M3	VISHAY	获取价格	Ultrafast Rectifier, 2 A FRED Pt?
VS-2EGH01-M3	VISHAY	获取价格	Ultrafast Rectifier, 2 A FRED Pt?
VS-2EGH02HM3	VISHAY	获取价格	Ultrafast Rectifier, 2 A FRED Pt?
VS-2EGH02-M3	VISHAY	获取价格	Ultrafast Rectifier, 2 A FRED Pt?
VS-2EJH01HM3	VISHAY	获取价格	Hyperfast Rectifier, 2 A FRED Pt?
VS-2EJH01-M3	VISHAY	获取价格	Hyperfast Rectifier, 2 A FRED Pt?
VS-2EJH02HM3	VISHAY	获取价格	Hyperfast Rectifier, 2 A FRED Pt?
VS-2EJH02HM3/6A	VISHAY	获取价格	DIODE GEN PURP 200V 2A DO221AC
VS-2EJH02HM3/6B	VISHAY	获取价格	DIODE GEN PURP 200V 2A DO221AC

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