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VS-20MQ060-M3 PDF预览

VS-20MQ060-M3

更新时间： 2024-11-15 14:54:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 126K
描述
High Performance Schottky Rectifier, 2 A

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VS-20MQ060-M3 数据手册

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VS-20MQ060-M3  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 2 A  
FEATURES  
• Low forward voltage drop  
• Guard ring for enhanced ruggedness and long  
term reliability  
Cathode  
Anode  
• Small foot print, surface mountable  
• High frequency operation  
SMA (DO-214AC)  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
PRIMARY CHARACTERISTICS  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
2 A  
60 V  
VR  
VF at IF  
0.68 V  
DESCRIPTION / APPLICATIONS  
IRM  
TJ max.  
7.5 mA at 125 °C  
150 °C  
The VS-20MQ060-M3 surface mount Schottky rectifier has  
been designed for applications requiring low forward drop  
and very small foot prints on PC boards. Typical  
applications are in disk drives, switching power supplies,  
converters, freewheeling diodes, battery charging, and  
reverse battery protection.  
EAS  
2.0 mJ  
Package  
SMA (DO-214AC)  
Single  
Circuit configuration  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
2
60  
A
V
tp = 5 μs sine  
2 Apk, TJ = 125 °C  
Range  
40  
A
0.68  
V
TJ  
-55 to +150  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-20MQ060-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
60  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
50 % duty cycle at TL = 107 °C, rectangular waveform  
On PC board 9 mm2 island (0.013 mm thick copper pad area)  
2.1  
Maximum average forward current  
See fig. 4  
IF(AV)  
A
50 % duty cycle at TL = 110 °C, rectangular waveform  
On PC board 9 mm2 island (0.013 mm thick copper pad area)  
2
Maximum peak one cycle  
non-repetitive surge current  
See fig. 6  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 4 mH  
Following any rated  
load condition and with  
rated VRRM applied  
40  
10  
2.0  
1.0  
IFSM  
EAS  
IAR  
A
Non-repetitive avalanche energy  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current  
Revision: 12-Apr-2018  
Document Number: 93408  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
123456

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