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VS-20ETF06FP-M3

更新时间： 2024-01-05 23:09:56
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 316K
描述
Fast Soft Recovery Rectifier Diode, 20 A

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VS-20ETF06FP-M3 数据手册

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VS-20ETF0..FPPbF Series, VS-20ETF0..FP-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
• Glass passivated pellet chip junction  
• 150 °C max. operation junction temperature  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
2
1
3
• Fully isolated package (VINS = 2500 VRMS  
)
3
1
• UL E78996 approved  
Cathode  
Anode  
TO-220 FULL-PAK  
Available  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
PRODUCT SUMMARY  
APPLICATIONS  
Package  
TO-220FP  
20 A  
These devices are intended for use in output rectification  
and freewheeling in inverters, choppers and converters as  
well as in input rectification where severe restrictions on  
conducted EMI should be met.  
IF(AV)  
VR  
200 V, 400 V, 600 V  
1.3 V  
VF at IF  
IFSM  
300 A  
DESCRIPTION  
trr  
60 ns  
The VS-20ETF0..FP... fast soft recovery rectifier series has  
been optimized for combined short reverse recovery time  
and low forward voltage drop.   
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
VF  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Sinusoidal waveform  
A
V
200 to 600  
300  
A
10 A, TJ = 25 °C  
1 A, 100 A/μs  
1.2  
V
trr  
60  
ns  
°C  
TJ  
-40 to +150  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK  
REVERSE VOLTAGE  
V
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
PEAK REVERSE VOLTAGE  
V
VS-20ETF02FPPbF, VS-20ETF02FP-M3  
VS-20ETF04FPPbF, VS-20ETF04FP-M3  
VS-20ETF06FPPbF, VS-20ETF06FP-M3  
200  
400  
600  
300  
500  
700  
5
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 51 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 ms to 10 ms, no voltage reapplied  
250  
A
Maximum peak one cycle non-repetitive  
surge current  
IFSM  
300  
316  
Maximum I2t for fusing  
I2t  
A2s  
442  
Maximum I2t for fusing  
I2t  
4420  
A2s  
Revision: 11-Feb-16  
Document Number: 94095  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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