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VS-20ETF06-M3 PDF预览

VS-20ETF06-M3

更新时间: 2024-11-21 20:10:31
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
8页 340K
描述
DIODE RECTIFIER DIODE, Rectifier Diode

VS-20ETF06-M3 技术参数

生命周期:Active包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.45
Samacsys Description:Vishay VS-20ETF06-M3, Switching Diode, 600V 20A, 160ns, 2-Pin TO-220AC其他特性:FREE WHEELING DIODE
应用:FAST SOFT RECOVERY外壳连接:CATHODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.3 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:300 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-40 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
最大重复峰值反向电压:600 V最大反向电流:100 µA
最大反向恢复时间:0.16 µs表面贴装:NO
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
Base Number Matches:1

VS-20ETF06-M3 数据手册

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VS-20ETF0...PbF Series, VS-20ETF0...-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 20 A  
FEATURES  
• Glass passivated pellet chip junction  
Base  
cathode  
2
• 150 °C max operating junction temperature  
• Low forward voltage drop and short reverse  
recovery time  
2
• Designed and qualified according to  
JEDEC®-JESD 47  
3
1
3
1
Cathode Anode  
• Material categorization:  
TO-220AC  
for definitions of compliance please see  
www.vishay.com/doc?99912  
APPLICATIONS  
PRODUCT SUMMARY  
These devices are intended for use in output rectification  
and freewheeling in inverters, choppers and converters as  
well as in input rectification where severe restrictions on  
conducted EMI should be met.  
Package  
TO-220AC  
20 A  
IF(AV)  
VR  
200 V, 400 V, 600 V  
1.3 V  
VF at IF  
IFSM  
DESCRIPTION  
300 A  
The VS-20ETF0... fast soft recovery rectifier series has been  
optimized for combined short reverse recovery time and low  
forward voltage drop.   
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
trr  
60 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
200 to 600  
20  
UNITS  
Range  
V
Sinusoidal waveform  
A
300  
1 A, 100 A/μs  
10 A, TJ = 25 °C  
Range  
60  
ns  
V
VF  
1.2  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK REVERSE  
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
VOLTAGE  
V
PEAK REVERSE VOLTAGE  
V
VS-20ETF02PbF, VS-20ETF02-M3  
VS-20ETF04PbF, VS-20ETF04-M3  
VS-20ETF06PbF, VS-20ETF06-M3  
200  
400  
600  
300  
500  
700  
5
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
20  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 97 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
250  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
300  
316  
Maximum I2t for fusing  
I2t  
A2s  
442  
Maximum I2t for fusing  
I2t  
4420  
A2s  
Revision: 11-Feb-16  
Document Number: 94096  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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