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VS-20CTQ150-1PbF

更新时间： 2024-09-25 01:15:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 160K
描述
High Performance Schottky Rectifier

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VS-20CTQ150-1PbF 数据手册

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VS-20CTQ150SPbF, VS-20CTQ150-1PbF  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
TO-263AB (D2PAK)  
TO-262AA  
FEATURES  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High frequency operation  
Base  
common  
cathode  
Base  
common  
cathode  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
• Guard ring for enhanced ruggedness and long  
term reliability  
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
• AEC-Q101 qualified  
VS-20CTQ150-1PbF  
VS-20CTQ150SPbF  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
150 V  
DESCRIPTION  
VR  
This center tap Schottky rectifier has been optimized for low  
reverse leakage at high temperature. The proprietary barrier  
technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
VF at IF  
0.66 V  
I
RM max.  
5.0 mA at 125 °C  
175 °C  
TJ max.  
EAS  
1.0 mJ  
Package  
TO-263AB (D2PAK), TO-262AA  
Diode variation  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
A
V
150  
tp = 5 μs sine  
1030  
A
VF  
10 Apk, TJ = 125 °C (per leg)  
Range  
0.66  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-20CTQ150SPbF  
VS-20CTQ150-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
150  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average forward  
per leg  
10  
20  
current  
IF(AV)  
50 % duty cycle at TC = 154 °C, rectangular waveform  
per device  
See fig. 5  
A
Maximum peak one cycle  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
TJ = 25 °C, IAS = 1 A, L = 2 mH  
Following any rated  
load condition and with  
rated VRRM applied  
1030  
180  
1.0  
non-repetitive surge current per leg  
See fig. 7  
IFSM  
Non-repetitive avalanche energy per leg  
EAS  
IAR  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
1
Revision: 29-Jul-14  
Document Number: 94490  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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