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VS-20CTQ040SPBF PDF预览

VS-20CTQ040SPBF

更新时间: 2024-11-23 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 高功率电源二极管
页数 文件大小 规格书
8页 170K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TO-220, D2PAK-3

VS-20CTQ040SPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SFM
包装说明:R-PSSO-G2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.36其他特性:FREEWHEELING DIODE, HIGH RELIABILITY
应用:HIGH POWER外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.57 V
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:1060 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最低工作温度:-55 °C最大输出电流:20 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:40 V
子类别:Rectifier Diodes表面贴装:YES
技术:SCHOTTKY端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-20CTQ040SPBF 数据手册

 浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第2页浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第3页浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第4页浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第5页浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第6页浏览型号VS-20CTQ040SPBF的Datasheet PDF文件第7页 
VS-20CTQ...SPbF, VS-20CTQ...-1PbF Series  
Vishay High Power Products  
Schottky Rectifier, 2 x 10 A  
FEATURES  
VS-20CTQ...-1PbF  
VS-20CTQ...SPbF  
• 175 °C TJ operation  
• Center tap TO-220 package  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Base  
common  
cathode  
Base  
common  
cathode  
• Guard ring for enhanced ruggedness and long  
term reliability  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• Halogen-free according to IEC 61249-2-21 definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
2
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
D2PAK  
TO-262  
DESCRIPTION  
The VS-20CTQ... center tap Schottky rectifier series has  
been optimized for low reverse leakage at high temperature.  
The proprietary barrier technology allows for reliable  
operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
PRODUCT SUMMARY  
IF(AV)  
2 x 10 A  
VR  
35 V to 45 V  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
Rectangular waveform  
Range  
VALUES  
20  
UNITS  
A
V
35 to 45  
1060  
tp = 5 μs sine  
A
VF  
10 Apk, TJ = 125 °C (per leg)  
Range  
0.57  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
VS-20CTQ035SPbF  
VS-20CTQ035-1PbF  
VS-20CTQ040SPbF  
VS-20CTQ040-1PbF  
VS-20CTQ045SPbF  
VS-20CTQ045-1PbF  
PARAMETER  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
35  
40  
45  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 145 °C, rectangular waveform  
20  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
1060  
IFSM  
265  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH  
13  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.0  
Document Number: 94163  
Revision: 12-Mar-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1

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