VS-20CTQ...HN3 Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 10 A
FEATURES
Base
common
cathode
2
• 175 °C TJ operation
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Anode
Anode
2
Common
cathode
1
3
TO-220AB
• Guard ring for enhanced ruggedness and long
term reliability
• AEC-Q101 qualified
PRODUCT SUMMARY
• Meets JESD 201 class 2 whisker test
Package
TO-220AB
2 x 10 A
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
IF(AV)
VR
35 V, 40 V, 45 V
0.57 V
DESCRIPTION
VF at IF
The VS-20CTQ...HN3 Series center tap Schottky rectifier
I
RM max.
15 mA at 125 °C
175 °C
series
has been optimized for low reverse leakage at
TJ max.
Diode variation
EAS
high temperature. The proprietary barrier technology allows
for reliable operation up to 175 °C junction temperature.
Typical applications are in switching power supplies,
converters, freewheeling diodes, and reverse battery
protection.
Common cathode
13 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
VRRM
IFSM
CHARACTERISTICS
VALUES
20
UNITS
Rectangular waveform
Range
A
V
35 to 45
1060
tp = 5 μs sine
A
VF
10 Apk, TJ = 125 °C (per leg)
Range
0.57
V
TJ
- 55 to 175
°C
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-20CTQ035HN3
VS-20CTQ040HN3
VS-20CTQ045HN3
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
35
40
45
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average forward current
See fig. 5
IF(AV)
50 % duty cycle at TC = 145 °C, rectangular waveform
20
A
Maximum peak one cycle non-repetitive
5 µs sine or 3 µs rect. pulse
1060
Following any rated load
condition and with rated
surge current per leg
See fig. 7
IFSM
VRRM applied
10 ms sine or 6 ms rect. pulse
265
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
EAS
IAR
TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH
13
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2.0
Revision: 18-Feb-13
Document Number: 94815
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000