Datasheet > VS-20CTQ040HN3

VS-20CTQ040HN3

更新时间： 2024-02-02 22:13:13

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	180K
描述
Low forward voltage drop

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VS-20CTQ040HN3 数据手册

VS-20CTQ...HN3 Series

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 2 x 10 A

FEATURES

Base

common

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

Anode

Common

cathode

TO-220AB

• Guard ring for enhanced ruggedness and long

term reliability

• AEC-Q101 qualified

PRODUCT SUMMARY

• Meets JESD 201 class 2 whisker test

Package

TO-220AB

2 x 10 A

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

V_R

35 V, 40 V, 45 V

0.57 V

DESCRIPTION

V_Fat I_F

The VS-20CTQ...HN3 Series center tap Schottky rectifier

_RMmax.

15 mA at 125 °C

175 °C

series

has been optimized for low reverse leakage at

T_Jmax.

Diode variation

E_AS

high temperature. The proprietary barrier technology allows

for reliable operation up to 175 °C junction temperature.

Typical applications are in switching power supplies,

converters, freewheeling diodes, and reverse battery

protection.

Common cathode

13 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

UNITS

Rectangular waveform

Range

35 to 45

1060

t_p= 5 μs sine

V_F

10 A_pk, T_J= 125 °C (per leg)

Range

0.57

T_J

- 55 to 175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-20CTQ035HN3

VS-20CTQ040HN3

VS-20CTQ045HN3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES UNITS

Maximum average forward current

See fig. 5



I_F(AV)

50 % duty cycle at T_C= 145 °C, rectangular waveform

Maximum peak one cycle non-repetitive 

5 µs sine or 3 µs rect. pulse

1060

Following any rated load

condition and with rated

surge current per leg

See fig. 7



I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

265

Non-repetitive avalanche energy per leg

Repetitive avalanche current per leg

E_AS

I_AR

T_J= 25 °C, I_AS= 2.0 A, L = 6.5 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

2.0

Revision: 18-Feb-13

Document Number: 94815

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-20CTQ040HN3相关器件

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VS-20CTQ040STRL-M3	VISHAY	获取价格	Low forward voltage drop
VS-20CTQ040STRLPBF	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 40V V(RRM), Silicon, HALOGEN FREE AND
VS-20CTQ040STRR-M3	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 40V V(RRM), Silicon, TO-263AB, D2PAK-3/2
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