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VS-20CTQ035HN3 PDF预览

VS-20CTQ035HN3

更新时间: 2024-11-26 21:20:35
品牌 Logo 应用领域
威世 - VISHAY 局域网二极管
页数 文件大小 规格书
7页 181K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 35V V(RRM), Silicon, TO-220AB,

VS-20CTQ035HN3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.71其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.76 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:265 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:35 V最大反向电流:2000 µA
表面贴装:NO技术:SCHOTTKY
端子面层:MATTE TIN OVER NICKEL端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VS-20CTQ035HN3 数据手册

 浏览型号VS-20CTQ035HN3的Datasheet PDF文件第2页浏览型号VS-20CTQ035HN3的Datasheet PDF文件第3页浏览型号VS-20CTQ035HN3的Datasheet PDF文件第4页浏览型号VS-20CTQ035HN3的Datasheet PDF文件第5页浏览型号VS-20CTQ035HN3的Datasheet PDF文件第6页浏览型号VS-20CTQ035HN3的Datasheet PDF文件第7页 
VS-20CTQ...HN3 Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 10 A  
FEATURES  
Base  
common  
cathode  
2
• 175 °C TJ operation  
• Low forward voltage drop  
• High frequency operation  
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
Anode  
Anode  
2
Common  
cathode  
1
3
TO-220AB  
• Guard ring for enhanced ruggedness and long  
term reliability  
• AEC-Q101 qualified  
PRODUCT SUMMARY  
• Meets JESD 201 class 2 whisker test  
Package  
TO-220AB  
2 x 10 A  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
IF(AV)  
VR  
35 V, 40 V, 45 V  
0.57 V  
DESCRIPTION  
VF at IF  
The VS-20CTQ...HN3 Series center tap Schottky rectifier  
I
RM max.  
15 mA at 125 °C  
175 °C  
series  
has been optimized for low reverse leakage at  
TJ max.  
Diode variation  
EAS  
high temperature. The proprietary barrier technology allows  
for reliable operation up to 175 °C junction temperature.  
Typical applications are in switching power supplies,  
converters, freewheeling diodes, and reverse battery  
protection.  
Common cathode  
13 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
20  
UNITS  
Rectangular waveform  
Range  
A
V
35 to 45  
1060  
tp = 5 μs sine  
A
VF  
10 Apk, TJ = 125 °C (per leg)  
Range  
0.57  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-20CTQ035HN3  
VS-20CTQ040HN3  
VS-20CTQ045HN3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
35  
40  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES UNITS  
Maximum average forward current  
See fig. 5  
IF(AV)  
50 % duty cycle at TC = 145 °C, rectangular waveform  
20  
A
Maximum peak one cycle non-repetitive  
5 µs sine or 3 µs rect. pulse  
1060  
Following any rated load  
condition and with rated  
surge current per leg  
See fig. 7  
IFSM  
VRRM applied  
10 ms sine or 6 ms rect. pulse  
265  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 2.0 A, L = 6.5 mH  
13  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
2.0  
Revision: 18-Feb-13  
Document Number: 94815  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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