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VS-20CTH03STRRPBF

更新时间： 2024-11-26 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 高帧率高马力二极管
页数 文件大小 规格书
9页 273K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, TO-220, D2PAK-3

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VS-20CTH03STRRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SFM
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.74
其他特性：FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用：HFRHP
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：0.95 VJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：120 A元件数量：2
相数：1端子数量：2
最高工作温度：175 °C最低工作温度：-65 °C
最大输出电流：10 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大重复峰值反向电压：300 V最大反向恢复时间：0.035 µs
子类别：Rectifier Diodes表面贴装：YES
端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-20CTH03STRRPBF 数据手册

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VS-20CTH03SPbF, VS-20CTH03-1PbF  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 2 x 10 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
• 175 °C operating junction temperature  
TO-263AB (D2PAK)  
TO-262AA  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
Base  
Base  
• AEC-Q101 qualified  
common  
cathode  
common  
cathode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
2
DESCRIPTION / APPLICATIONS  
Vishay Semiconductors 300 V series are the state of the art  
hyperfast recovery rectifiers designed with optimized  
performance of forward voltage drop and hyperfast  
recovery time.  
2
2
3
3
1
1
Common  
cathode Anode  
Common  
Anode cathode Anode  
Anode  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
VS-20CTH03SPbF  
VS-20CTH03-1PbF  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
2 x 10 A  
300 V  
VR  
VF at IF  
0.85 V  
trr max.  
TJ max.  
Diode variation  
35 ns  
175 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 160 °C  
MAX.  
300  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per diode  
Average rectified forward current  
per device  
10  
IF(AV)  
20  
A
Non-repetitive peak surge current  
IFSM  
TJ = 25 °C  
120  
Operating junction and storage temperatures  
TJ, TStg  
-65 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 10 A  
300  
-
-
V
-
-
-
-
-
-
1.05  
0.85  
-
1.25  
0.95  
20  
Forward voltage  
VF  
IR  
IF = 10 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 300 V  
6
200  
-
Junction capacitance  
Series inductance  
CT  
LS  
30  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 09-Jul-15  
Document Number: 94011  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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