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VS-20CTH03STRLHM3 PDF预览

VS-20CTH03STRLHM3

更新时间: 2024-11-26 14:38:43
品牌 Logo 应用领域
威世 - VISHAY 超快速恢复二极管
页数 文件大小 规格书
8页 203K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-263AB, D2PAK-3/2

VS-20CTH03STRLHM3 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:D2PAK-3/2Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:22 weeks
风险等级:5.61Is Samacsys:N
其他特性:FREE WHEELING DIODE, LOW LEAKAGE CURRENT应用:HYPER FAST RECOVERY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.25 VJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2湿度敏感等级:1
最大非重复峰值正向电流:120 A元件数量:2
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-55 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED参考标准:AEC-Q101
最大重复峰值反向电压:300 V最大反向电流:20 µA
最大反向恢复时间:0.031 µs表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

VS-20CTH03STRLHM3 数据手册

 浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第2页浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第3页浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第4页浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第5页浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第6页浏览型号VS-20CTH03STRLHM3的Datasheet PDF文件第7页 
VS-20CTH03SHM3, VS-20CTH03-1HM3  
www.vishay.com  
Vishay Semiconductors  
Hyperfast Rectifier, 2 x 10 A FRED Pt®  
FEATURES  
• Hyperfast recovery time  
• Low forward voltage drop  
• Low leakage current  
2
3
1
• 175 °C operating junction temperature  
3
2
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
1
TO-263AB (D2PAK)  
TO-262AA  
• AEC-Q101 qualified, meets JESD 201, class 1  
whisker test  
Base  
Base  
common  
cathode  
common  
cathode  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
2
2
DESCRIPTION / APPLICATIONS  
Vishay Semiconductors 300 V series are the state of the art  
hyperfast recovery rectifiers designed with optimized  
performance of forward voltage drop and hyperfast  
recovery time.  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness and  
reliability characteristics.  
These devices are intended for use in the output rectification  
stage of SMPS, UPS, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce over  
dissipation in the switching element and snubbers.  
2
2
3
3
1
1
Common  
cathode Anode  
Common  
Anode cathode Anode  
Anode  
VS-20CTH03SHM3  
VS-20CTH03-1HM3  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
IF(AV)  
2 x 10 A  
300 V  
VR  
VF at IF  
0.85 V  
trr typ.  
23 ns  
TJ max.  
Diode variation  
175 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
TC = 160 °C  
MAX.  
300  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per diode  
Average rectified forward current  
per device  
10  
IF(AV)  
20  
A
Non-repetitive peak surge current  
IFSM  
TJ = 25 °C  
120  
Operating junction and storage temperatures  
TJ, TStg  
-55 to +175  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
IF = 10 A  
300  
-
-
V
-
-
-
-
-
-
1.05  
0.85  
-
1.25  
0.95  
20  
Forward voltage  
VF  
IR  
IF = 10 A, TJ = 125 °C  
VR = VR rated  
Reverse leakage current  
μA  
TJ = 125 °C, VR = VR rated  
VR = 300 V  
6
200  
-
Junction capacitance  
Series inductance  
CT  
LS  
30  
8
pF  
nH  
Measured lead to lead 5 mm from package body  
-
Revision: 09-Jun-16  
Document Number: 95671  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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