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VS-20CDH02-M3 PDF预览

VS-20CDH02-M3

更新时间: 2023-12-06 19:52:33
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 149K
描述
Hyperfast Rectifier, 2 x 10 A FRED Pt?

VS-20CDH02-M3 数据手册

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VS-20CDH02-M3  
Vishay Semiconductors  
www.vishay.com  
Hyperfast Rectifier, 2 x 10 A FRED Pt®  
FEATURES  
• Hyperfast recovery time, reduced Qrr, and soft  
recovery  
eSMP® Series  
SMPD (TO-263AC)  
• 175 °C maximum operating junction temperature  
• Specified for output and snubber operation  
• Low forward voltage drop  
K
1
• Low leakage current  
2
• Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Top View  
Bottom View  
• Meets JESD 201 class 2 whisker test  
Anode 1  
Anode 2  
K
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
Cathode  
DESCRIPTION / APPLICATIONS  
LINKS TO ADDITIONAL RESOURCES  
State of the art hyperfast recovery rectifiers specifically  
designed with optimized performance of forward voltage  
drop and hyperfast recovery time.  
3
D
3
D
3D Models  
The planar structure and the platinum doped life time control  
guarantee the best overall performance, ruggedness, and  
reliability characteristics.  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 10 A  
200 V  
These devices are intended for use in the output rectification  
stage of SMPS, telecom, DC/DC converters as well as  
freewheeling diode in low voltage inverters and chopper  
motor drives.  
VR  
VF at IF  
trr  
0.77 V  
25 ns  
Their extremely optimized stored charge and low recovery  
current minimize the switching losses and reduce power  
dissipation in the switching element.  
TJ max.  
175 °C  
Package  
SMPD (TO-263AC)  
Common cathode  
Circuit configuration  
MECHANICAL DATA  
Case: SMPD (TO-263AC)  
Molding compound meets UL 94 V-0 flammability rating  
Halogen-free, RoHS-compliant  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
200  
UNITS  
Peak repetitive reverse voltage  
VRRM  
V
per device  
Average rectified forward current  
per diode  
20  
IF(AV)  
IFSM  
Tsolder pad = 152 °C  
TJ = 25 °C, 6 ms square pulse  
10  
A
per device  
Non-repetitive peak surge current  
per diode  
210  
110  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
-
UNITS  
Breakdown voltage, blocking voltage  
VBR, VR  
IR = 100 μA  
200  
IF = 10 A  
-
-
-
-
-
0.94  
0.77  
-
1.05  
0.87  
2
V
Forward voltage, per diode  
VF  
IF = 10 A, TJ = 150 °C  
VR = VR rated  
Reverse leakage current, per diode  
Junction capacitance, per diode  
IR  
μA  
pF  
TJ = 150 °C, VR = VR rated  
VR = 200 V  
10  
150  
-
CT  
30  
Revision: 21-Jan-2021  
Document Number: 95820  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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