VS-20CDH02-M3
Vishay Semiconductors
www.vishay.com
Hyperfast Rectifier, 2 x 10 A FRED Pt®
FEATURES
• Hyperfast recovery time, reduced Qrr, and soft
recovery
eSMP® Series
SMPD (TO-263AC)
• 175 °C maximum operating junction temperature
• Specified for output and snubber operation
• Low forward voltage drop
K
1
• Low leakage current
2
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Top View
Bottom View
• Meets JESD 201 class 2 whisker test
Anode 1
Anode 2
K
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
DESCRIPTION / APPLICATIONS
LINKS TO ADDITIONAL RESOURCES
State of the art hyperfast recovery rectifiers specifically
designed with optimized performance of forward voltage
drop and hyperfast recovery time.
3
D
3D Models
The planar structure and the platinum doped life time control
guarantee the best overall performance, ruggedness, and
reliability characteristics.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 10 A
200 V
These devices are intended for use in the output rectification
stage of SMPS, telecom, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
VR
VF at IF
trr
0.77 V
25 ns
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce power
dissipation in the switching element.
TJ max.
175 °C
Package
SMPD (TO-263AC)
Common cathode
Circuit configuration
MECHANICAL DATA
Case: SMPD (TO-263AC)
Molding compound meets UL 94 V-0 flammability rating
Halogen-free, RoHS-compliant
Terminals: matte tin plated leads, solderable per
J-STD-002
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
200
UNITS
Peak repetitive reverse voltage
VRRM
V
per device
Average rectified forward current
per diode
20
IF(AV)
IFSM
Tsolder pad = 152 °C
TJ = 25 °C, 6 ms square pulse
10
A
per device
Non-repetitive peak surge current
per diode
210
110
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
-
MAX.
-
UNITS
Breakdown voltage, blocking voltage
VBR, VR
IR = 100 μA
200
IF = 10 A
-
-
-
-
-
0.94
0.77
-
1.05
0.87
2
V
Forward voltage, per diode
VF
IF = 10 A, TJ = 150 °C
VR = VR rated
Reverse leakage current, per diode
Junction capacitance, per diode
IR
μA
pF
TJ = 150 °C, VR = VR rated
VR = 200 V
10
150
-
CT
30
Revision: 21-Jan-2021
Document Number: 95820
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000