Datasheet > VS-1EQH01-M3

VS-1EQH01-M3

更新时间： 2024-11-07 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	146K
描述
Ultrafast Rectifier, 1 A FRED Pt?

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数据手册

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VS-1EQH01-M3 数据手册

VS-1EQH01-M3, VS-1EQH02-M3

www.vishay.com

Vishay Semiconductors

Ultrafast Rectifier, 1 A FRED Pt^®

FEATURES

eSMP^®Series

• Very low profile - typical height of 0.65 mm

• Ideal for automated placement

• Low forward voltage drop, low power losses

• Low leakage current

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

Top View

Bottom View

MicroSMP (DO-219AD)

• For PFC, CRM snubber operation

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

Anode

LINKS TO ADDITIONAL RESOURCES

TYPICAL APPLICATIONS

For use in high frequency, freewheeling, DC/DC converters,

PFC, and in snubber industrial and automotive applications.

3D Models

MECHANICAL DATA

PRIMARY CHARACTERISTICS

Case: MicroSMP (DO-219AD)

I_F(AV)

1 A

Molding compound meets UL 94 V-0 flammability rating

V_R

V_Fat I_F

100 V, 200 V

Terminals: matte tin plated leads, solderable per

J-STD-002, meets JESD 201 class 2 whisker test

0.72 V

t_rr(typ.)

33 ns

30 A

Polarity: color band denotes cathode end

I_FSM

T_Jmax.

175 °C

Package

Circuit configuration

MicroSMP (DO-219AD)

Single

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

VS-1EQH01-M3

VS-1EQH02-M3

100

Peak repetitive reverse voltage

V_RRM

200

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

I_FSM

T_M= 159 °C

T_J= 25 °C, 10 ms sine pulse

Operating junction and storage temperatures

T_J, T_Stg

-55 to +175

°C

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNITS

VS-1EQH01-M3

VS-1EQH02-M3

100

Breakdown voltage,

blocking voltage

V_BR

V_R

I_R= 100 μA

200

I_F= 1 A

0.88

0.97

0.75

Forward voltage

V_F

I_F= 1 A, T_J= 150 °C

V_R= V_Rrated

0.72

Reverse leakage current

Junction capacitance

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 200 V

C_T

Revision: 24-Oct-2022

Document Number: 96592

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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