Datasheet > VS-180NQ045PBF

VS-180NQ045PBF

更新时间： 2024-09-24 01:20:59

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	142K
描述
High Performance Schottky Rectifier

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VS-180NQ045PBF 数据手册

VS-180NQ045PbF

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 180 A

FEATURES

• 150 °C T_Joperation

• Low forward voltage drop

• High frequency operation

Lug terminal

anode

• Guard ring for enhanced ruggedness and

long term reliability

• Designed and qualified for industrial level

• UL approved file E222165

Base

cathode

HALF-PAK (D-67)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESCRIPTION

PRIMARY CHARACTERISTICS

The VS-180NQ.. high current Schottky rectifier module

series has been optimized for low reverse leakage at high

temperature. The proprietary barrier technology allows

for reliable operation up to 150 °C junction temperature.

Typical applications are in high current switching power

supplies, plating power supplies, UPS systems, converters,

freewheeling diodes, welding, and reverse battery

protection.

IF_(AV)

180 A

45 V

V_R

Package

HALF-PAK (D-67)

Single

Circuit configuration

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

I_F(AV)

V_RRM

I_FSM

CHARACTERISTICS

VALUES

180

UNITS

Rectangular waveform

t_p= 5 μs sine

180 A_pk, T_J= 125 °C

Range

27 000

0.63

V_F

T_J

-55 to +150

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-180NQ045PbF

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 105 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

180

5 μs sine or 3 μs rect. pulse

27 000

Maximum peak one cycle

non-repetitive surge current

See fig. 7

Following any rated

load condition and with

rated V_RRMapplied

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 22 A, L = 1 mH

2400

243

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 08-May-17

Document Number: 94148

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6

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