Datasheet > VS-175BGQ045HF4

VS-175BGQ045HF4

更新时间： 2023-12-06 20:03:32

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	145K
描述
High Performance Schottky Rectifier, 175 A

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VS-175BGQ045HF4 数据手册

VS-175BGQ045HF4

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 175 A

FEATURES

• 150 °C max. operating junction temperature

• High frequency operation

Cathode

Anode

• Ultralow forward voltage drop

• Continuous high current operation

• Guard ring for enhanced ruggedness and

long term reliability

PowerTab^®

• Screw mounting only

• AEC-Q101 qualified

• PowerTab^®package

PRODUCT SUMMARY

Package

PowerTab^®

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

175 A

45 V

V_R

DESCRIPTION

V_Fat I_F

I_RM

0.7 V

The VS-175BGQ045HF4 Schottky rectifier has been

optimized for ultralow forward voltage drop specifically for

low voltage output in high current AC/DC power supplies. 

The proprietary barrier technology allows for reliable

operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

reverse battery protection, and redundant power

subsystems.

640 mA at 125 °C

150 °C

T_Jmax.

Diode variation

E_AS

Single die

40 mJ

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

175

UNITS

Rectangular waveform

°C

I_F(AV)

T_C

V_RRM

I_FSM

t_p= 5 μs sine

175 A_pk(typical)

T_J

8700

0.63

V_F

T_J

150

°C

Range

-55 to +150

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-175BGQ045HF4

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 84 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

I_F(AV)

175

Following any rated load

condition and with rated

5 μs sine or 3 μs rect. pulse

8700

Maximum peak one cycle

non-repetitive surge current

I_FSM

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 6 A, L = 2 mH

1550

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 16-Jun-15

Document Number: 93805

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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