VS-175BGQ030HN4
Vishay Semiconductors
www.vishay.com
High Performance Schottky Rectifier, 175 A
FEATURES
• 150 °C max. operating junction temperature
• High frequency operation
• Ultralow forward voltage drop
• Continuous high current operation
Cathode
Anode
• Guard ring for enhanced ruggedness and
long term reliability
PowerTab®
• Screw mounting only
• AEC-Q101 qualified
• PowerTab® package
LINKS TO ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3
D
3D Models
DESCRIPTION
The VS-175BGQ030HN4 Schottky rectifier has been
optimized for ultralow forward voltage drop specifically for
low voltage output in high current AC/DC power supplies.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
reverse battery protection, and redundant power
subsystems.
PRIMARY CHARACTERISTICS
IF(AV)
175 A
30 V
VR
VF at IF
0.52 V
IRM
TJ max.
920 mA at 125 °C
150 °C
EAS
80 mJ
Package
PowerTab®
MECHANICAL DATA
Case: PowerTab®
Circuit configuration
Single
Molding compound meets UL 94 V-0 flammability rating
Terminal: nickel plated, screwable
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
175
UNITS
Rectangular waveform
A
°C
V
IF(AV)
TC
112
VRRM
30
IFSM
tp = 5 μs sine
175 Apk (typical)
TJ
7400
A
0.47
V
VF
150
°C
°C
TJ
Range
-55 to +150
VOLTAGE RATINGS
PARAMETER
SYMBOL
VR
VS-175BGQ030HF4
UNITS
Maximum DC reverse voltage
Maximum working peak reverse voltage
30
V
VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
175
UNITS
Maximum average forward current
IF(AV)
50 % duty cycle at TC = 112 °C, rectangular waveform
A
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
7400
Maximum peak one cycle
non-repetitive surge current
IFSM
A
1400
80
VRRM applied
Non-repetitive avalanche energy
Repetitive avalanche current
EAS
IAR
TJ = 25 °C, IAS = 12 A, L = 1.12 mH
mJ
A
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
12
Revision: 13-Dec-2023
Document Number: 97217
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000