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VS-175BGQ030HN4 PDF预览

VS-175BGQ030HN4

更新时间: 2024-09-24 17:02:07
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
6页 152K
描述
High Performance Schottky Rectifier, 175 A

VS-175BGQ030HN4 数据手册

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VS-175BGQ030HN4  
Vishay Semiconductors  
www.vishay.com  
High Performance Schottky Rectifier, 175 A  
FEATURES  
• 150 °C max. operating junction temperature  
• High frequency operation  
• Ultralow forward voltage drop  
• Continuous high current operation  
Cathode  
Anode  
• Guard ring for enhanced ruggedness and  
long term reliability  
PowerTab®  
• Screw mounting only  
• AEC-Q101 qualified  
• PowerTab® package  
LINKS TO ADDITIONAL RESOURCES  
3
D
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
3
D
3D Models  
DESCRIPTION  
The VS-175BGQ030HN4 Schottky rectifier has been  
optimized for ultralow forward voltage drop specifically for  
low voltage output in high current AC/DC power supplies.  
The proprietary barrier technology allows for reliable  
operation up to 150 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
reverse battery protection, and redundant power  
subsystems.  
PRIMARY CHARACTERISTICS  
IF(AV)  
175 A  
30 V  
VR  
VF at IF  
0.52 V  
IRM  
TJ max.  
920 mA at 125 °C  
150 °C  
EAS  
80 mJ  
Package  
PowerTab®  
MECHANICAL DATA  
Case: PowerTab®  
Circuit configuration  
Single  
Molding compound meets UL 94 V-0 flammability rating  
Terminal: nickel plated, screwable  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
175  
UNITS  
Rectangular waveform  
A
°C  
V
IF(AV)  
TC  
112  
VRRM  
30  
IFSM  
tp = 5 μs sine  
175 Apk (typical)  
TJ  
7400  
A
0.47  
V
VF  
150  
°C  
°C  
TJ  
Range  
-55 to +150  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-175BGQ030HF4  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
30  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
175  
UNITS  
Maximum average forward current  
IF(AV)  
50 % duty cycle at TC = 112 °C, rectangular waveform  
A
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Following any rated load  
condition and with rated  
7400  
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
A
1400  
80  
VRRM applied  
Non-repetitive avalanche energy  
Repetitive avalanche current  
EAS  
IAR  
TJ = 25 °C, IAS = 12 A, L = 1.12 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
12  
Revision: 13-Dec-2023  
Document Number: 97217  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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