Datasheet > VS-175BGQ030-N4

VS-175BGQ030-N4

更新时间： 2024-04-09 19:00:04

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	154K
描述
High Performance Schottky Rectifier, 175 A

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VS-175BGQ030-N4 数据手册

VS-175BGQ030-N4

Vishay Semiconductors

www.vishay.com

High Performance Schottky Rectifier, 175 A

FEATURES

• 150 °C max. operating junction temperature

• High frequency operation

• Ultralow forward voltage drop

• Continuous high current operation

Cathode

Anode

• Guard ring for enhanced ruggedness and long

term reliability

PowerTab^®

• Screw mounting only

• Designed and qualified according to JEDEC^®-JESD 47

• PowerTab^®package

LINKS TO ADDITIONAL RESOURCES

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

3D Models

DESCRIPTION

The VS-175BGQ030 Schottky rectifier has been optimized

for ultralow forward voltage drop specifically for low voltage

output in high current AC/DC power supplies.

The proprietary barrier technology allows for reliable

operation up to 150 °C junction temperature. Typical

applications are in switching power supplies, converters,

reverse battery protection, and redundant power

subsystems.

PRIMARY CHARACTERISTICS

I_F(AV)

175 A

30 V

V_R

V_Fat I_F

0.52 V

I_RM

T_Jmax.

920 mA at 125 °C

125 °C

E_AS

80 mJ

PowerTab^®

MECHANICAL DATA

Package

Case: PowerTab^®

Circuit configuration

Single

Molding compound meets UL 94 V-0 flammability rating

Terminal: nickel plated, screwable

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

175

UNITS

Rectangular waveform

T_C

°C

I_F(AV)

112

V_RRM

I_FSM

t_p= 5 μs sine

175 A_pk(typical)

T_J

7400

0.47

V_F

T_J

150

°C

Range

-55 to +150

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-175BGQ030

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average forward current

I_F(AV)

50 % duty cycle at T_C= 112 °C, rectangular waveform

175

5 μs sine or 3 μs rect. pulse

Following any rated load

condition and with rated

7400

Maximum peak one cycle

non-repetitive surge current

I_FSM

E_AS

I_AR

10 ms sine or 6 ms rect. pulse

1400

V_RRMapplied

Non-repetitive avalanche energy

Repetitive avalanche current

T_J= 25 °C, I_AS= 12 A, L = 1.12 mH

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 13-Dec-2023

Document Number: 97218

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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