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VS-16CTQ080STRRPBF

更新时间： 2024-11-25 14:38:43
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 260K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3

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VS-16CTQ080STRRPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.75Is Samacsys：N
Base Number Matches：1

VS-16CTQ080STRRPBF 数据手册

 浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第2页浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第3页浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第4页浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第5页浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第6页浏览型号VS-16CTQ080STRRPBF的Datasheet PDF文件第7页 
VS-16CTQ...SPbF, VS-16CTQ...-1PbF Series  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 8 A  
FEATURES  
VS-16CTQ...-1PbF  
VS-16CTQ...SPbF  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High  
purity,  
high  
temperature  
epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
• High frequency operation  
• Guard ring for enhanced ruggedness and long  
term reliability  
Base  
common  
cathode  
Base  
common  
cathode  
2
2
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
• AEC-Q101 qualified  
2
2
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
1
1
3
3
Common  
cathode  
Common  
cathode  
Anode  
Anode  
Anode  
Anode  
D
2PAK  
TO-262  
DESCRIPTION  
This center tap Schottky rectifier series has been optimized  
for low reverse leakage at high temperature. The proprietary  
barrier technology allows for reliable operation up to 175 °C  
junction temperature. Typical applications are in switching  
power supplies, converters, freewheeling diodes, and  
reverse battery protection.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK), TO-262AA  
2 x 8 A  
IF(AV)  
VR  
60 V, 80 V, 100 V  
0.58 V  
VF at IF  
IRM  
7 mA at 125 °C  
175 °C  
TJ max.  
Diode variation  
EAS  
Common cathode  
7.5 mJ  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
16  
UNITS  
Rectangular waveform  
A
V
60 to 100  
850  
tp = 5 μs sine  
A
VF  
8 Apk, TJ = 125 °C (per leg)  
Range  
0.58  
V
TJ  
-55 to +175  
°C  
VOLTAGE RATINGS  
VS-16CTQ060SPbF  
VS-16CTQ080SPbF  
VS-16CTQ100SPbF  
PARAMETER  
SYMBOL  
UNITS  
VS-16CTQ060-1PbF VS-16CTQ080-1PbF VS-16CTQ100-1PbF  
Maximum DC reverse voltage  
VR  
60  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
8
IF(AV)  
50 % duty cycle at TC = 148 °C, rectangular waveform  
A
per device  
16  
Maximum peak one cycle  
non-repetitive surge current per leg  
See fig. 7  
5 μs sine or 3 μs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Following any rated load  
condition and with rated  
RRM applied  
850  
275  
7.50  
0.50  
IFSM  
EAS  
IAR  
A
V
Non-repetitive avalanche energy per leg  
TJ = 25 °C, IAS = 0.50 A, L = 60 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
Repetitive avalanche current per leg  
Revision: 27-Feb-14  
Document Number: 94145  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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VS-16CTQ080STRRPBF 替代型号

型号 品牌 替代类型 描述 数据表
VS-16CTQ080SPBF VISHAY

完全替代

 Rectifier Diode, Schottky, 1 Phase, 1 Element, 80V V(RRM), Silicon, HALOGEN FREE AND ROHS

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