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VS-12CTQ035-M3 PDF预览

VS-12CTQ035-M3

更新时间: 2024-11-08 14:55:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 171K
描述
High Performance Schottky Rectifier, 2 x 6 A

VS-12CTQ035-M3 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknownFactory Lead Time:26 weeks
风险等级:5.63其他特性:FREE WHEELING DIODE
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.73 V
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
湿度敏感等级:1最大非重复峰值正向电流:140 A
元件数量:2相数:1
端子数量:3最高工作温度:175 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260最大重复峰值反向电压:35 V
最大反向电流:800 µA表面贴装:NO
技术:SCHOTTKY端子面层:Pure Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30Base Number Matches:1

VS-12CTQ035-M3 数据手册

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VS-12CTQ035-M3, VS-12CTQ040-M3, VS12CTQ045-M3  
www.vishay.com  
Vishay Semiconductors  
High Performance Schottky Rectifier, 2 x 6 A  
FEATURES  
• 175 °C TJ operation  
Base  
common  
cathode  
4
• Center tap TO-220 package  
• Low forward voltage drop  
• High frequency operation  
1
• High purity, high temperature epoxy  
encapsulation for enhanced mechanical  
strength and moisture resistance  
2
2
Anode  
Anode  
Common  
3
3
1
cathode  
TO-220AB 3L  
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified according to JEDEC®-JESD 47  
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 6 A  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
VR  
35 V, 40 V, 45 V  
0.53 V  
VF at IF  
RM max.  
DESCRIPTION  
I
7 mA at 125 °C  
175 °C  
The VS-12CTQ... center tap Schottky rectifier series has  
been optimized for low reverse leakage at high temperature.  
The proprietary barrier technology allows for reliable  
operation up to 175 °C junction temperature. Typical  
applications are in switching power supplies, converters,  
freewheeling diodes, and reverse battery protection.  
TJ max.  
EAS  
8 mJ  
Package  
TO-220AB 3L  
Circuit configuration  
Common cathode  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
CHARACTERISTICS  
VALUES  
12  
UNITS  
IF(AV)  
VRRM  
IFSM  
VF  
Rectangular waveform  
A
V
Range  
35 to 45  
690  
tp = 5 μs sine  
A
6 Apk, TJ = 125 °C (per leg)  
0.53  
V
TJ  
Range  
-55 to +175  
°C  
VOLTAGE RATINGS  
PARAMETER  
SYMBOL  
VR  
VS-12CTQ035-M3  
VS-12CTQ040-M3  
40  
VS-12CTQ045-M3  
UNITS  
Maximum DC reverse voltage  
Maximum working peak reverse voltage  
35  
45  
V
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
50 % duty cycle at TC = 160 °C, rectangular waveform  
VALUES  
UNITS  
per leg  
6
Maximum average forward  
current. See fig. 5  
IF(AV)  
A
per device  
12  
690  
140  
8
Followinganyratedload  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
Maximum peak one cycle non-repetitive  
surge current per leg. See fig. 7  
IFSM  
EAS  
IAR  
A
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
TJ = 25 °C, IAS = 1.20 A, L = 11.10 mH  
mJ  
A
Current decaying linearly to zero in 1 μs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
1.20  
Revision: 28-Feb-2023  
Document Number: 96270  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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