Datasheet > VS-12CDU06HM3

VS-12CDU06HM3

更新时间： 2023-12-06 20:07:50

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	153K
描述
Ultrafast Rectifier, 2 x 6 A FRED Pt?

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VS-12CDU06HM3 数据手册

VS-12CDU06HM3

Vishay Semiconductors

www.vishay.com

Ultrafast Rectifier, 2 x 6 A FRED Pt^®

FEATURES

eSMP^®Series

SMPD (TO-263AC)

• Ultrafast recovery time, reduced Q_rr, and soft

recovery

•

175 °C maximum operating junction temperature

• For PFC CRM, snubber operation

• Low forward voltage drop

• Low leakage current

• Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

Top View

Bottom View

• AEC-Q101 qualified, meets JESD 201 class 2 whisker test

Anode 1

Anode 2

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Cathode

DESCRIPTION / APPLICATIONS

LINKS TO ADDITIONAL RESOURCES

State of the art ultrafast recovery rectifiers specifically

designed with optimized performance of forward voltage

drop and ultrafast recovery time, and soft recovery.

3D Models

The planar structure and the platinum doped life time control

guarantee the best overall performance, ruggedness, and

reliability characteristics.

PRIMARY CHARACTERISTICS

These devices are intended for use in PFC, boost, in the

AC/DC section of SMPS, freewheeling and clamp diodes.

I_F(AV)

2 x 6 A

600 V

0.89 V

45 ns

V_R

Their extremely optimized stored charge and low recovery

current minimize the switching losses and reduce power

dissipation in the switching element and snubbers

V_Fat I_F

t_rr

T_Jmax.

175 °C

MECHANICAL DATA

Package

SMPD (TO-263AC)

Common cathode

Case: SMPD (TO-263AC)

Circuit configuration

Molding compound meets UL 94 V-0 flammability rating

Halogen-free, RoHS-compliant

Terminals: matte tin plated leads, solderable per

J-STD-002

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

600

UNITS

Peak repetitive reverse voltage

V_RRM

per device

Average rectified forward current

Non-repetitive peak surge current

I_F(AV)

I_FSM

T_{solder pad}= 156 °C

T_J= 25 °C, 6 ms square pulse

per diode

per device

per diode

200

105

ELECTRICAL SPECIFICATIONS (T_J= 25 °C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNITS

Breakdown voltage, blocking voltage

V_BR, V_R

I_R= 100 μA

600

I_F= 6 A

1.05

0.89

1.3

1.1

Forward voltage, per diode

V_F

I_F= 6 A, T_J= 150 °C

V_R= V_Rrated

Reverse leakage current, per diode

Junction capacitance, per diode

I_R

μA

T_J= 150 °C, V_R= V_Rrated

V_R= 600 V

150

C_T

Revision: 21-Jan-2021

Document Number: 95811

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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VS-12CDU06HM3/I	VISHAY	Rectifier Diode, 1 Phase, 2 Element, 6A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND	获取价格
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VS-12CDU06-M3/I	VISHAY	Rectifier Diode, 1 Phase, 2 Element, 6A, 600V V(RRM), Silicon, TO-263AC, HALOGEN FREE AND	获取价格
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