Datasheet > VS-10TQ035HN3

VS-10TQ035HN3

更新时间： 2023-12-06 20:10:58

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	159K
描述
High Performance Schottky Rectifier, 10 A

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VS-10TQ035HN3 数据手册

VS-10TQ035HN3, VS-10TQ040HN3, VS10TQ045HN3

www.vishay.com

Vishay Semiconductors

High Performance Schottky Rectifier, 10 A

FEATURES

Base

cathode

• 175 °C T_Joperation

• Low forward voltage drop

• High frequency operation

• High purity, high temperature epoxy

encapsulation for enhanced mechanical

strength and moisture resistance

TO-220AC

Cathode Anode

• Guard ring for enhanced ruggedness and long term

reliability

• Meet JESD 201 class 2 whisker test

• AEC-Q101 qualified

PRIMARY CHARACTERISTICS

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

I_F(AV)

10 A

V_R

V_Fat I_F

I_RM

35 V, 40 V, 45 V

0.49 V

DESCRIPTION

15 mA at 125 °C

175 °C

The VS-10TQ... Schottky rectifier series has been optimized

for low reverse leakage at high temperature. The proprietary

barrier technology allows for reliable operation up to 175 °C

junction temperature. Typical applications are in switching

power supplies, converters, freewheeling diodes, and

reverse battery protection.

T_Jmax.

E_AS

13 mJ

Package

TO-220AC

Single

Circuit configuration



MAJOR RATINGS AND CHARACTERISTICS

SYMBOL

CHARACTERISTICS

VALUES

UNITS

I_F(AV)

V_RRM

I_FSM

V_F

Rectangular waveform

35/45

t_p= 5 μs sine

1050

10 A_pk, T_J= 125 °C

Range

0.49

T_J

-55 to +175

°C

VOLTAGE RATINGS

PARAMETER

SYMBOL

V_R

VS-10TQ035HN3

VS-10TQ040HN3

VS-10TQ045HN3

UNITS

Maximum DC reverse voltage

Maximum working peak reverse voltage

V_RWM

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

50 % duty cycle at T_C= 151 °C, rectangular waveform

VALUES

UNITS

Maximum average forward current

See fig. 5

I_F(AV)

5 μs sine or 3 μs rect. pulse

1050

Maximum peak one cycle non-repetitive

Following any rated load

condition and with rated

surge current

See fig. 7



I_FSM

V_RRMapplied

10 ms sine or 6 ms rect. pulse

T_J= 25 °C, I_AS= 2 A, L = 6.5 mH

280

Non-repetitive avalanche energy

Repetitive avalanche current

E_AS

I_AR

Current decaying linearly to zero in 1 μs

Frequency limited by T_Jmaximum V_A= 1.5 x V_Rtypical

Revision: 22-Sep-17

Document Number: 96381

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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