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VS-10RIA120MS90 PDF预览

VS-10RIA120MS90

更新时间: 2024-02-26 02:51:19
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 188K
描述
Silicon Controlled Rectifier,

VS-10RIA120MS90 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.69
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:SCRBase Number Matches:1

VS-10RIA120MS90 数据手册

 浏览型号VS-10RIA120MS90的Datasheet PDF文件第2页浏览型号VS-10RIA120MS90的Datasheet PDF文件第3页浏览型号VS-10RIA120MS90的Datasheet PDF文件第4页浏览型号VS-10RIA120MS90的Datasheet PDF文件第5页浏览型号VS-10RIA120MS90的Datasheet PDF文件第6页浏览型号VS-10RIA120MS90的Datasheet PDF文件第7页 
VS-10RIA Series  
Vishay Semiconductors  
www.vishay.com  
Medium Power Phase Control Thyristors  
(Stud Version), 10 A  
FEATURES  
• Improved glass passivation for high reliability  
and exceptional stability at high temperature  
• High dIF/dt and dV/dt capabilities  
• Standard package  
• Low thermal resistance  
• Metric threads version available  
• Types up to 1200 V VDRM/VRRM  
• Designed and qualified for industrial and consumer level  
TO-208AA (TO-48)  
PRODUCT SUMMARY  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
Package  
Diode variation  
IT(AV)  
TO-208AA (TO-48)  
Single SCR  
10 A  
TYPICAL APPLICATIONS  
• Medium power switching  
• Phase control applications  
VDRM/VRRM  
100 V to 1200 V  
1.75 V  
VTM  
IGT  
60 mA  
• Can be supplied to meet stringent military, aerospace and  
other high reliability requirements  
TJ  
-65 °C to 125 °C  
MAJOR RATINGS AND CHARACTERISTICS  
PARAMETER  
TEST CONDITIONS  
VALUES  
10  
UNITS  
A
°C  
A
IT(AV)  
TC  
85  
IT(RMS)  
25  
50 Hz  
60 Hz  
50 Hz  
60 Hz  
225  
ITSM  
A
240  
255  
I2t  
A2s  
233  
VDRM/VRRM  
100 to 1200  
110  
V
tq  
Typical  
μs  
°C  
TJ  
-65 to 125  
ELECTRICAL SPECIFICATIONS  
VOLTAGE RATINGS  
VDRM/VRRM, MAXIMUM REPETITIVE PEAK VRSM, MAXIMUM NON-REPETITIVE  
IDRM/IRRM MAXIMUM  
AT TJ = TJ MAXIMUM  
mA  
TYPE  
NUMBER  
VOLTAGE  
CODE  
AND OFF-STATE VOLTAGE (1)  
V
PEAK VOLTAGE (2)  
V
10  
20  
100  
200  
150  
300  
20  
40  
400  
500  
VS-10RIA  
60  
600  
700  
10  
80  
800  
900  
100  
120  
1000  
1200  
1100  
1300  
Notes  
(1)  
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs  
For voltage pulses with tp 5 ms  
(2)  
Revision: 11-Mar-14  
Document Number: 93689  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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