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VS-10ETF04PBF

更新时间: 2024-11-25 15:57:39
品牌 Logo 应用领域
威世 - VISHAY 软恢复二极管快速软恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
8页 257K
描述
FAST RECOVERY RECTFR 400V 10A 2PIN TO-220AC - Bulk

VS-10ETF04PBF 技术参数

生命周期:Lifetime Buy包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
其他特性:FREE WHEELING DIODE应用:FAST SOFT RECOVERY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.2 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2JESD-609代码:e3
最大非重复峰值正向电流:130 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-40 °C
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT APPLICABLE最大重复峰值反向电压:400 V
最大反向电流:100 µA最大反向恢复时间:0.2 µs
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT APPLICABLEBase Number Matches:1

VS-10ETF04PBF 数据手册

 浏览型号VS-10ETF04PBF的Datasheet PDF文件第2页浏览型号VS-10ETF04PBF的Datasheet PDF文件第3页浏览型号VS-10ETF04PBF的Datasheet PDF文件第4页浏览型号VS-10ETF04PBF的Datasheet PDF文件第5页浏览型号VS-10ETF04PBF的Datasheet PDF文件第6页浏览型号VS-10ETF04PBF的Datasheet PDF文件第7页 
VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series  
www.vishay.com  
Vishay Semiconductors  
Fast Soft Recovery Rectifier Diode, 10 A  
FEATURES  
Base  
cathode  
• Glass passivated pellet chip junction  
• 150 °C max operating junction temperature  
2
• Low forward voltage drop and short reverse  
recovery time  
2
• Designed  
JEDEC®-JESD 47  
• Material categorization:  
and  
qualified  
according  
to  
3
1
TO-220AC  
1
3
for definitions of compliance please see  
Cathode  
Anode  
www.vishay.com/doc?99912  
APPLICATIONS  
PRODUCT SUMMARY  
These devices are intended for use in output rectification  
and freewheeling in inverters, choppers and converters as  
well as in input rectification where severe restrictions on  
conducted EMI should be met.  
Package  
TO-220AC  
IF(AV)  
10 A  
200 V, 400 V, 600 V  
1.2 V  
VR  
VF at IF  
IFSM  
DESCRIPTION  
130 A  
The VS-10ETF0... fast soft recovery rectifier series has been  
optimized for combined short reverse recovery time and low  
forward voltage drop.   
The glass passivation ensures stable reliable operation in  
the most severe temperature and power cycling conditions.  
trr  
50 ns  
TJ max.  
Diode variation  
Snap factor  
150 °C  
Single die  
0.6  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
VRRM  
IF(AV)  
IFSM  
trr  
CHARACTERISTICS  
VALUES  
200 to 600  
10  
UNITS  
V
Sinusoidal waveform  
A
130  
1 A, 100 A/µs  
50  
ns  
V
VF  
10 A, TJ = 25 °C  
1.2  
TJ  
-40 to +150  
°C  
VOLTAGE RATINGS  
VRRM, MAXIMUM PEAK REVERSE  
VRSM, MAXIMUM NON-REPETITIVE  
IRRM  
AT 150 °C  
mA  
PART NUMBER  
VOLTAGE  
V
PEAK REVERSE VOLTAGE  
V
VS-10ETF02PbF, VS-10ETF02-M3  
VS-10ETF04PbF, VS-10ETF04-M3  
VS-10ETF06PbF, VS-10ETF06-M3  
200  
400  
600  
300  
500  
700  
3
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
10  
UNITS  
Maximum average forward current  
IF(AV)  
TC = 128 °C, 180° conduction half sine wave  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
10 ms sine pulse, rated VRRM applied  
10 ms sine pulse, no voltage reapplied  
t = 0.1 to 10 ms, no voltage reapplied  
110  
130  
60  
A
Maximum peak one cycle  
non-repetitive surge current  
IFSM  
Maximum I2t for fusing  
I2t  
A2s  
85  
Maximum I2t for fusing  
I2t  
850  
A2s  
Revision: 11-Feb-16  
Document Number: 94090  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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