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VP3203 PDF预览

VP3203

更新时间： 2024-01-07 04:00:53
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 460K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

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中文翻译

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VP3203 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Transferred零件包装代码：DIE
包装说明：UNCASED CHIP, S-XUUC-N2针数：2
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.68Is Samacsys：N
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 VFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：60 pFJESD-30 代码：S-XUUC-N2
JESD-609代码：e0元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：UNSPECIFIED
封装形状：SQUARE封装形式：UNCASED CHIP
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：YES
端子面层：TIN LEAD端子形式：NO LEAD
端子位置：UPPER处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VP3203 数据手册

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VP3203  
P-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
BVDSS  
/
RDS(ON)  
(max)  
0.6Ω  
ID(ON)  
Order Number / Package  
TO-243AA*  
BVDGS  
(min)  
TO-92  
Die†  
-30V  
-4.0A  
VP3203N3  
VP3203N8  
VP3203ND  
*Same as SOT-89. Product supplied on 2000 piece carrier tape reels.  
†
MIL visual screening available.  
Product marking for TO-243AA:  
Features  
VP2L❋  
❏
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Where ❋ = 2-week alpha date code  
Low CISS and fast switching speeds  
Excellent thermal stability  
Advanced DMOS Technology  
Integral Source-Drain diode  
These enhancement-mode (normally-off) transistors utilize a  
verticalDMOSstructureandSupertex’swell-provensilicon-gate  
manufacturingprocess.Thiscombinationproducesdeviceswith  
thepowerhandlingcapabilitiesofbipolartransistorsandwiththe  
high input impedance and positive temperature coefficient  
inherent in MOS devices. Characteristic of all MOS structures,  
these devices are free from thermal runaway and thermally-  
induced secondary breakdown.  
High input impedance and high gain  
Complementary N- and P-channel devices  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Package Options  
D
Absolute Maximum Ratings  
Drain-to-Source Voltage  
G
D
S
BVDSS  
BVDGS  
± 20V  
S G D  
TO-243AA  
(SOT-89)  
Drain-to-Gate Voltage  
TO-92  
Gate-to-Source Voltage  
Operating and Storage Temperature  
Soldering Temperature*  
-55°C to +150°C  
300°C  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

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VP3203N3-G MICROCHIP

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VP3203N3P003 SUPERTEX

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VP3203N3P011 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta
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 		Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta
VP3203N3P016 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta
VP3203N3P017 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta
VP3203N3P018 SUPERTEX

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 		Small Signal Field-Effect Transistor, 0.65A I(D), 30V, 1-Element, P-Channel, Silicon, Meta

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