Datasheet > VP2206N3-G-P013

VP2206N3-G-P013

更新时间： 2024-09-21 02:52:11

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
14页	824K
描述
P-Channel Enhancement-Mode Vertical DMOS FET

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VP2206N3-G-P013 数据手册

VP2206

P-Channel Enhancement-Mode Vertical DMOS FET

Features

General Description

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

The VP2206 Enhancement-mode (normally-off)

transistor uses a vertical DMOS structure and a

well-proven silicon-gate manufacturing process. This

combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally induced secondary breakdown.

• Low C_ISSand Fast Switching Speeds

• Excellent Thermal Stability

• Integral Source-to-Drain Diode

• High Input Impedance and High Gain

Applications

Microchip’s vertical DMOS FETs are ideally suited for a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance

and fast switching speeds are desired.

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

Package Types

3-lead TO-92

3-lead TO-39

(Top view)

DRAIN

GATE

SOURCE

DRAIN

GATE

See Table 3-1 and Table 3-2 for pin information.

 2021 Microchip Technology Inc. and its subsidiaries

DS20006009A-page 1

12 3 4 5 6 7...14

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VP2206N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
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VP2206N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta