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VP2206N3-G PDF预览

VP2206N3-G

更新时间： 2024-09-20 21:19:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP 开关晶体管
页数 文件大小 规格书
6页 674K
描述
640mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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中文翻译

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VP2206N3-G 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CYLINDRICAL, O-PBCY-T3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：10 weeks
风险等级：1.01配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (ID)：0.64 A
最大漏源导通电阻：0.9 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：40 pFJEDEC-95代码：TO-92
JESD-30 代码：O-PBCY-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT APPLICABLE极性/信道类型：P-CHANNEL
认证状态：Not Qualified表面贴装：NO
端子面层：Matte Tin (Sn)端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT APPLICABLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VP2206N3-G 数据手册

 浏览型号VP2206N3-G的Datasheet PDF文件第2页浏览型号VP2206N3-G的Datasheet PDF文件第3页浏览型号VP2206N3-G的Datasheet PDF文件第4页浏览型号VP2206N3-G的Datasheet PDF文件第5页浏览型号VP2206N3-G的Datasheet PDF文件第6页 
Supertex inc.  
VP2206  
P-Channel Enhancement-Mode  
Vertical DMOS FET  
Features  
General Description  
► Free from secondary breakdown  
► Low power drive requirement  
► Ease of paralleling  
The Supertex VP2206 is an enhancement-mode (normally-  
off) transistor that utilizes a vertical DMOS structure and  
Supertex’s well-proven silicon-gate manufacturing process.  
This combination produces a device with the power handling  
capabilities of bipolar transistors, and the high input  
impedance and positive temperature coefficient inherent  
in MOS devices. Characteristic of all MOS structures, this  
device is free from thermal runaway and thermally-induced  
secondary breakdown.  
► Low CISS and fast switching speeds  
► High input impedance and high gain  
► Excellent thermal stability  
► Integral source-to-drain diode  
Applications  
► Motor controls  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
very low threshold voltage, high breakdown voltage, high  
input impedance, low input capacitance, and fast switching  
speeds are desired.  
► Converters, amplifiers, and switches  
► Power supply circuits  
► Drivers (relays, hammers, solenoids, lamps,  
memories, displays, bipolar transistors, etc.)  
Ordering Information  
Product Summary  
Package  
RDS(ON)  
ID(ON)  
Part Number  
Packing  
Option  
TO-39  
TO-92  
BVDSS/BVDGS  
-60V  
(max)  
(min)  
VP2206N2-G  
500/Bag  
0.9Ω  
-4.0A  
VP2206N3-G  
1000/Bag  
VP2206N3-G P002  
VP2206N3-G P003  
VP2206N3-G P005  
VP2206N3-G P013  
VP2206N3-G P014  
Pin Configuration  
TO-92  
2000/Reel  
DRAIN  
GATE  
-G denotes a lead (Pb)-free / RoHS compliant package.  
Contact factory for Wafer / Die availablity.  
SOURCE  
SOURCE  
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.  
DRAIN  
GATE  
TO-39  
TO-92  
Absolute Maximum Ratings  
Parameter  
Value  
BVDSS  
BVDGS  
±20V  
Product Marking  
Drain-to-source voltage  
Drain-to-gate voltage  
VP  
2206N2  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
Gate-to-source voltage  
Operating and storage temperature  
-55OC to +150OC  
Package may or may not include the following marks: Si or  
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
TO-39  
SiVP  
2 2 0 6  
YYWW  
YY = Year Sealed  
WW = Week Sealed  
Typical Thermal Resistance  
= “Green” Packaging  
Package  
θja  
Package may or may not include the following marks: Si or  
TO-39  
N/A  
132OC/W  
TO-92  
TO-92  
Doc.# DSFP-VP2206  
E082313  
Supertex inc.  
www.supertex.com  
123456

中文翻译

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VP2206N3-G 替代型号

型号 品牌 替代类型 描述 数据表
2V7002LT1G ONSEMI

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 Small Signal MOSFET 60 V, 115 mA, N.Channel SOT.23
2N7002LT3G ONSEMI

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 Small Signal MOSFET 60 V, 115 mA, N−Channel SOT−23

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