5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 小信号场效应晶体管> VP2206N3
VP2206N3 PDF预览

VP2206N3

更新时间： 2024-09-20 03:19:15
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件
页数 文件大小 规格书
4页 454K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

VP2206N3 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：CYLINDRICAL, O-PBCY-W3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.24
其他特性：HIGH INPUT IMPEDANCE配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：0.65 A
最大漏极电流 (ID)：0.64 A最大漏源导通电阻：0.9 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：40 pF
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-W3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

VP2206N3 数据手册

 浏览型号VP2206N3的Datasheet PDF文件第2页浏览型号VP2206N3的Datasheet PDF文件第3页浏览型号VP2206N3的Datasheet PDF文件第4页 
VP2206  
P-Channel Enhancement-Mode  
Vertical DMOS FETs  
Ordering Information  
Order Number / Package  
BVDSS  
/
RDS(ON)  
(max)  
ID(ON)  
(min)  
BVDGS  
TO-39  
TO-92  
-60V  
0.9Ω  
-4A  
VP2206N2  
VP2206N3  
†MIL visual screening available  
High Reliability Devices  
Advanced DMOS Technology  
See pages 5-4 and 5-5 for MILITARY STANDARD Process  
Flows and Ordering Information.  
These enhancement-mode (normally-off) transistors utilize a  
vertical DMOS structure and Supertex’s well-proven silicon-gate  
manufacturing process. This combination produces devices with  
the power handling capabilities of bipolar transistors and with the  
high input impedance and positive temperature coefficient inher-  
ent in MOS devices. Characteristic of all MOS structures, these  
devices are free from thermal runaway and thermally-induced  
secondary breakdown.  
Features  
❏
❏
❏
❏
❏
❏
❏
❏
Free from secondary breakdown  
Low power drive requirement  
Ease of paralleling  
Supertex’s vertical DMOS FETs are ideally suited to a wide range  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Low CISS and fast switching speeds  
Excellent thermal stability  
Integral Source-Drain diode  
High input impedance and high gain  
Complementary N- and P-channel devices  
Package Options  
Applications  
❏
❏
❏
❏
❏
❏
Motor controls  
Converters  
Amplifiers  
Switches  
Power supply circuits  
Drivers (relays, hammers, solenoids, lamps, memories,  
displays, bipolar transistors, etc.)  
G
D
S
S G D  
Absolute Maximum Ratings  
Drain-to-Source Voltage  
Drain-to-Gate Voltage  
Gate-to-Source Voltage  
TO-92  
TO-39  
Case: DRAIN  
BVDSS  
BVDGS  
± 20V  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
Note: See Package Outline section for dimensions.  
* Distance of 1.6 mm from case for 10 seconds.  
11/12/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

下载PDF

与VP2206N3相关器件

型号 品牌 获取价格 描述 数据表
VP2206N3-G MICROCHIP

获取价格

 		640mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
VP2206N3-G-P013 MICROCHIP

获取价格

 		P-Channel Enhancement-Mode Vertical DMOS FET
VP2206N3P001 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P003 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.64A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P004 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P005 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P006 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P007 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P008 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta
VP2206N3P011 SUPERTEX

获取价格

 		Small Signal Field-Effect Transistor, 0.65A I(D), 60V, 1-Element, P-Channel, Silicon, Meta

与VP2206N3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证