Datasheet > VP2204N3

VP2204N3

更新时间： 2024-09-19 23:45:15

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
4页	457K
描述
TRANSISTOR \| MOSFET \| P-CHANNEL \| 40V V(BR)DSS \| 650MA I(D) \| TO-92

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VP2204N3 数据手册

VP2206

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

(max)

I_D(ON)

(min)

BV_DGS

TO-39

TO-92

-60V

0.9Ω

-4A

VP2206N2

VP2206N3

^†MIL visual screening available

High Reliability Devices

Advanced DMOS Technology

See pages 5-4 and 5-5 for MILITARY STANDARD Process

Flows and Ordering Information.

These enhancement-mode (normally-off) transistors utilize a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces devices with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, these

devices are free from thermal runaway and thermally-induced

secondary breakdown.

Features

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Package Options

Applications

❏

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

S G D

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

TO-92

TO-39

Case: DRAIN

BV_DSS

BV_DGS

± 20V

Operating and Storage Temperature

-55°C to +150°C

300°C

Soldering Temperature*

Note: See Package Outline section for dimensions.

* Distance of 1.6 mm from case for 10 seconds.

11/12/01

Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability

indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to

workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the

Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.

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与VP2204N3相关器件

型号	品牌	获取价格	描述	数据表
VP2204N3P001	SUPERTEX	获取价格	暂无描述
VP2204N3P002	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P004	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P005	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P006	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P007	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P008	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P011	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P012	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta
VP2204N3P013	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.65A I(D), 40V, 1-Element, P-Channel, Silicon, Meta

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