Datasheet > VP1504

VP1504

更新时间： 2024-01-26 12:51:33

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
2页	334K
描述
P-Channel Enhancement-Mode Vertical DMOS FETs

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

VP1504 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Transferred	包装说明：	UNCASED CHIP, X-XUUC-N
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	40 V	最大漏极电流 (ID)：	1.2 A
最大漏源导通电阻：	15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	8 pF	JESD-30 代码：	X-XUUC-N
JESD-609代码：	e0	元件数量：	1
工作模式：	ENHANCEMENT MODE	封装主体材料：	UNSPECIFIED
封装形状：	UNSPECIFIED	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

VP1504 数据手册

VP1504/VP1506/VP1509

P-Channel Enhancement-Mode

Vertical DMOS FETs

Ordering Information

Order Number / Package

BV_DSS

R_DS(ON)

I_D(ON)

BV_DGS

(max)

(min)

Die^†

-40V

8.0Ω

-0.5A

VP1504NW

-60V

-0.5A

VP1506NW

VP1509NW

-90V

† MIL visual screening available.

Features

Advanced DMOS Technology

❏

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces adevice with

the power handling capabilities of bipolar transistors and with the

high input impedance and positive temperature coefficient inher-

ent in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Low C_ISSand fast switching speeds

Excellent thermal stability

Integral Source-Drain diode

High input impedance and high gain

Supertex’s vertical DMOS FETs are ideally suited to a wide range

of switching and amplifying applications where high breakdown

voltage, high input impedance, low input capacitance, and fast

switching speeds are desired.

Complementary N- and P-channel devices

Applications

❏

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps, memories,

displays, bipolar transistors, etc.)

Absolute Maximum Ratings

Drain-to-Source Voltage

Drain-to-Gate Voltage

Gate-to-Source Voltage

BV_DSS

BV_DGS

±±0V

Operating and Storage Temperature

-55^OC to +150^OC

300^OC

Soldering Temperature*

* Distance of 1.6 mm from case for 10 seconds.

下载PDF

与VP1504相关器件

型号	品牌	描述	获取价格	数据表
VP1506	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP1506ND	SUPERTEX	Small Signal Field-Effect Transistor	获取价格
VP1506NJ	SUPERTEX	Small Signal Field-Effect Transistor	获取价格
VP1506NW	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP1509	SUPERTEX	P-Channel Enhancement-Mode Vertical DMOS FETs	获取价格
VP1509NJ	SUPERTEX	暂无描述	获取价格