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VP0635N3P011 PDF预览

VP0635N3P011

更新时间: 2024-11-23 18:28:19
品牌 Logo 应用领域
超科 - SUPERTEX 开关晶体管
页数 文件大小 规格书
4页 126K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP0635N3P011 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:350 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:25 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):20 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:P-CHANNEL
功耗环境最大值:1 W认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VP0635N3P011 数据手册

 浏览型号VP0635N3P011的Datasheet PDF文件第2页浏览型号VP0635N3P011的Datasheet PDF文件第3页浏览型号VP0635N3P011的Datasheet PDF文件第4页 

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