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VP0635N3 PDF预览

VP0635N3

更新时间: 2024-11-23 19:02:55
品牌 Logo 应用领域
超科 - SUPERTEX 输入元件开关晶体管
页数 文件大小 规格书
4页 202K
描述
Small Signal Field-Effect Transistor, 0.3A I(D), 350V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VP0635N3 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:CYLINDRICAL, O-PBCY-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.92
其他特性:HIGH INPUT IMPEDANCE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:350 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):20 pFJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):1 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

VP0635N3 数据手册

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