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VP0610T-T1-E3

更新时间： 2024-09-16 07:27:43
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威世 - VISHAY /
页数 文件大小 规格书
5页 88K
描述
Small Signal Field-Effect Transistor, 0.12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3

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VP0610T-T1-E3 数据手册

 浏览型号VP0610T-T1-E3的Datasheet PDF文件第2页浏览型号VP0610T-T1-E3的Datasheet PDF文件第3页浏览型号VP0610T-T1-E3的Datasheet PDF文件第4页浏览型号VP0610T-T1-E3的Datasheet PDF文件第5页 
TP0610L/T, VP0610L/T, BS250  
Vishay Siliconix  
P-Channel 60-V (D-S) MOSFET  
PRODUCT SUMMARY  
Part Number  
V(BR)DSS Min (V)  
rDS(on) Max (W)  
VGS(th) (V)  
ID (A)  
TP0610L  
TP0610T  
VP0610L  
VP0610T  
BS250  
−60  
−60  
−60  
−60  
−45  
10 @ V = −10 V  
−1 to −2.4  
−1 to −2.4  
−1 to −3.5  
−1 to −3.5  
−1 to −3.5  
−0.18  
−0.12  
−0.18  
−0.12  
−0.18  
GS  
10 @ V = −10 V  
GS  
10 @ V = −10 V  
GS  
10 @ V = −10 V  
GS  
14 @ V = −10 V  
GS  
FEATURES  
BENEFITS  
APPLICATIONS  
D High-Side Switching  
D Ease in Driving Switches  
D Low Offset (Error) Voltage  
D Low-Voltage Operation  
D High-Speed Switching  
D Drivers: Relays, Solenoids, Lamps,  
Hammers, Displays, Memories,  
Transistors, etc.  
D Battery Operated Systems  
D Power Supply, Converter Circuits  
D Motor Control  
D Low On-Resistance: 8 W  
D Low Threshold: −1.9 V  
D Fast Switching Speed: 16 ns  
D Low Input Capacitance: 15 pF  
D Easily Driven Without Buffer  
TO-92-18RM  
(TO-18 Lead Form)  
Device Marking  
Front View  
TO-226AA  
(TO-92)  
TO-236  
(SOT-23)  
TP0610L  
Device Marking  
Front View  
1
1
S
G
D
D
“S” TP  
0610L  
xxll  
BS250  
G
1
2
Marking Code:  
G
S
2
2
3
“S” BS  
250  
xxll  
3
D
TP0610T: TOwll  
VP0610T: VOwll  
S
VP0610L  
w = Week Code  
lL = Lot Traceability  
3
“S” VP  
0610L  
xxll  
“S” = Siliconix Logo  
xxll = Date Code  
Top View  
Top View  
Top View  
BS250  
TP0610T  
VP0610T  
TP0610L  
VP0610L  
“S” = Siliconix Logo  
xxll = Date Code  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol TP0610L TP0610T VP0610L VP0610T  
BS250  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
−60  
"30  
−0.18  
−0.11  
−0.8  
0.8  
−60  
"30  
−0.12  
−0.07  
−0.4  
0.36  
0.14  
350  
−60  
"30  
−60  
"30  
−0.12  
−0.07  
−0.4  
0.36  
0.14  
350  
−45  
"25  
−0.18  
DS  
GS  
V
T = 25_C  
−0.18  
−0.11  
−0.8  
A
Continuous Drain Current  
I
D
(T = 150_C)  
J
T = 100_C  
A
A
a
Pulsed Drain Current  
I
DM  
T = 25_C  
0.8  
0.83  
150  
A
Power Dissipation  
P
W
D
T = 100_C  
0.32  
156  
0.32  
A
Thermal Resistance, Junction-to-Ambient  
R
thJA  
156  
_C/W  
_C  
Operating Junction and Storage Temperature Range  
T , T  
J
−55 to 150  
stg  
Notes  
a. Pulse width limited by maximum junction temperature.  
For applications information see AN804.  
Document Number: 70209  
S-41260—Rev. H, 05-Jul-04  
www.vishay.com  
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