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VP0300M-1TR1 PDF预览

VP0300M-1TR1

更新时间: 2024-11-03 08:38:39
品牌 Logo 应用领域
威世 - VISHAY 晶体管
页数 文件大小 规格书
2页 50K
描述
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-237AA, TO-237, 3 PIN

VP0300M-1TR1 技术参数

生命周期:Obsolete零件包装代码:TO-237AA
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (ID):0.5 A
最大漏源导通电阻:2.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):60 pFJEDEC-95代码:TO-237AA
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管元件材料:SILICON

VP0300M-1TR1 数据手册

 浏览型号VP0300M-1TR1的Datasheet PDF文件第2页 

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